參數(shù)資料
型號: L6562DTR
廠商: STMICROELECTRONICS
元件分類: 穩(wěn)壓器
英文描述: 0.8 A POWER FACTOR CONTROLLER, PDSO8
封裝: SO-8
文件頁數(shù): 2/16頁
文件大小: 249K
代理商: L6562DTR
L6562
10/16
the output of the multiplier in the proximity of the line voltage zero-crossings. This offset is reduced as the
instantaneous line voltage increases, so that it becomes negligible as the line voltage moves toward the
top of the sinusoid.
To maximally benefit from the THD optimizer circuit, the high-frequency filter capacitor after the bridge rec-
tifier should be minimized, compatibly with EMI filtering needs. A large capacitance, in fact, introduces a
conduction dead-angle of the AC input current in itself - even with an ideal energy transfer by the PFC pre-
regulator - thus making the action of the optimizer circuit little effective.
Figure 23. Typical application circuit (250W, Wide-range mains)
Figure 24. Demo board (EVAL6562-80W, Wide-range mains): Electrical schematic
NTC
2.5
8
3
BRIDGE
STBR606
R1
1.5 M
C1
1 F
400V
R3
22 k
C29
22 F
25V
FUSE
5A/250V
R4
180 k
D8
1N4150
D2
1N5248B
R14
100
C5 12 nF
R6
68 k
T
5
6
L6562
7
21
R7
10
MOS
STP12NM50
7 °C/W heat sink
4
R11
750 k
C6
100 F
450V
Vo=400V
Po=250W
-
Vac
(85V to 265V)
R9
0.33
1W
R13
9.53 k
+
-
C4
100 nF
C2
10nF
D1
STTH5L06
R50 10 k
C3 2.2 F
R2
1.5 M
R5
180 k
R10
0.33
1W
R12
750 k
C23
680 nF
Boost Inductor Spec: EB0057-C (COILCRAFT)
D3 1N5406
NTC
2.5
8
3
BRIDGE
DF06M
R1
750 k
C1
0.47 F
400V
R3
10 k
C29
22 F
25V
FUSE
4A/250V
R4
180 k
D8
1N4150
D2
1N5248B
R14
100
C5 12 nF
R6
68 k
T
5
6
L6562
7
21
R7
33
MOS
STP8NM50
4
R11
750 k
C6
47 F
450V
Vo=400V
Po=80W
-
Vac
(85V to 265V)
R9
0.82
0.6 W
R13
9.53 k
+
-
C4
100 nF
C2
10nF
D1
STTH1L06
R50 12 k
C3 680 nF
R2
750 k
R5
180 k
R10
0.82
0.6 W
R12
750 k
C23
330 nF
Boost Inductor Spec (ITACOIL E2543/E)
E25x13x7 core, 3C85 ferrite
1.5 mm gap for 0.7 mH primary inductance
Primary: 105 turns 20x0.1 mm
Secondary: 11 turns 0.1 mm
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