- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄384585 > L6387D (意法半導(dǎo)體) HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER PDF資料下載
參數(shù)資料
| 型號(hào)： | L6387D |
| 廠(chǎng)商： | 意法半導(dǎo)體 |
| 英文描述： | HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER |
| 中文描述： | 高壓高端和低端驅(qū)動(dòng) |
| 文件頁(yè)數(shù)： | 4/9頁(yè) |
| 文件大?。?/td> | 133K |
| 代理商： | L6387D |
For both high and low side buffers @25C Tamb
0
1
2
3
4
5
C (nF)
0
50
100
150
200
250
time
(nsec)
Tr
D99IN1054
Tf
Figure 1. Typical Rise and Fall Times vs.
Load Capacitance
0
2
4
6
8
10
12
14
16 V
S
(V)
10
10
2
10
3
10
4
Iq
(
μ
A)
D99IN1055
Figure 2. Quiescent Current vs. Supply
Voltage
Input Logic
L6387 Input Logic is V
CC
(17V) compatible. An in-
terlocking features is offered (see truth table be-
low) to avoid undesired simultaneous turn ON of
both Power Switches driven.
Table 1.
Input
HIN
LIN
HVG
LVG
0
0
0
0
0
1
0
1
1
0
1
0
1
1
0
0
Output
BOOTSTRAP DRIVER
A bootstrap circuitry is needed to supply the high
voltage section. This function is normally accom-
plished by a high voltage fast recovery diode (fig.
3a). In the L6387 a patented integrated structure
replaces the external diode. It is realized by a
high voltage DMOS, driven synchronously with
the low side driver (LVG), with in series a diode,
as shown in fig. 3b
An internal charge pump (fig. 3b) provides the
DMOS driving voltage .
The diode connected in series to the DMOS has
been added to avoid undesirable turn on of it.
CBOOT selection and charging
:
To choose the proper C
BOOT
value the external
MOS can be seen as an equivalent capacitor.
This capacitor C
EXT
is related to the MOS total
gate charge :
C
EXT
=
Q
gate
V
gate
The ratio between the capacitors C
EXT
and C
BOOT
is proportional to the cyclical voltage loss .
It has to be:
C
BOOT
>>>C
EXT
e.g.: if Q
gate
is 30nC and V
gate
is 10V, C
EXT
is
3nF. With C
BOOT
= 100nF the drop would be
300mV.
If HVG has to be supplied for a long time, the
C
BOOT
selection has to take into account also the
leakage losses.
e.g.: HVG steady state consumption is lower than
200
μ
A, so if HVG T
ON
is 5ms, C
BOOT
has to
supply 1
μ
C to C
EXT
. This charge on a 1
μ
F ca-
pacitor means a voltage drop of 1V.
The internal bootstrap driver gives great advan-
tages: the external fast recovery diode can be
avoided (it usually has great leakage current).
This structure can work only if V
OUT
is close to
GND (or lower) and in the meanwhile the LVG is
on. The charging time (T
charge
) of the C
BOOT
is
the time in which both conditions are fulfilled and
it has to be long enough to charge the capacitor.
The bootstrap driver introduces a voltage drop
due to the DMOS R
DSON
(typical value: 125
Ohm). At low frequency this drop can be ne-
glected. Anyway increasing the frequency it
must be taken in to account.
The following equation is useful to compute the
L6387
4/9
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| L6452 | DUAL 13X16 MATRIX HEAD INK JET DRIVER |
| L6561D013TR | POWER FACTOR CORRECTOR |
| L6569 | HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR |
| L6569A | HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR |
| L6569AD | HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| L6387DTR | 功能描述:功率驅(qū)動(dòng)器IC Hi-Volt Hi-Low Side RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類(lèi)型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| L6387E | 功能描述:功率驅(qū)動(dòng)器IC HV H-Bridge driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類(lèi)型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| L6387ED | 功能描述:功率驅(qū)動(dòng)器IC HV H-Bridge driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類(lèi)型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| L6387ED013TR | 功能描述:功率驅(qū)動(dòng)器IC HV H-Bridge driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類(lèi)型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| L6388 | 功能描述:功率驅(qū)動(dòng)器IC Hi Vltg Hi AND Lo SIDE DRIVER RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類(lèi)型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。