- 您現在的位置：買賣IC網 > PDF目錄384585 > L6386D (意法半導體) HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER PDF資料下載
參數資料
| 型號： | L6386D |
| 廠商： | 意法半導體 |
| 英文描述： | HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER |
| 中文描述： | 高壓高端和低端驅動 |
| 文件頁數： | 5/10頁 |
| 文件大?。?/td> | 80K |
| 代理商： | L6386D |
BOOTSTRAP DRIVER
A bootstrap circuitry is neededto supply the high
voltage section. This function is normally accom-
plished by a high voltage fast recovery diode (fig.
4a). In the L6386 a patented integrated structure
replaces the external diode. It is realized by a
high voltage DMOS, driven synchronously with
the low side driver (LVG), with in series a diode,
as shownin fig. 4b
An internal charge pump (fig. 4b) provides the
DMOS driving voltage .
The diode connected in series to the DMOS has
been added to avoid undesirable turn on of it.
CBOOT selectionand charging
:
To choose the proper C
BOOT
value the external
MOS can be seen as an equivalent capacitor.
This capacitor C
EXT
is related to the MOS total
gate charge :
C
EXT
=
Q
gate
V
gate
The ratio betweenthe capacitorsC
EXT
andC
BOOT
is proportionalto the cyclical voltageloss .
It has to be:
C
BOOT
>>>C
EXT
e.g.: if Q
gate
is 30nC and V
gate
is 10V, C
EXT
is
3nF. With
C
BOOT
= 100nF the drop would be
300mV.
If HVG has to be supplied for a long time, the
C
BOOT
selectionhas to take into account also the
leakage losses.
e.g.: HVG steady state consumptionis lower than
200
μ
A, so if HVG T
ON
is
5ms, C
BOOT
has to
supply 1
μ
C to C
EXT
. This charge on a 1
μ
F ca-
pacitor means a voltagedrop of 1V.
The internal bootstrap driver gives great advan-
tages: the external fast recovery diode can be
avoided (it usually has great leakage current).
This structure can work only if V
OUT
is close to
GND (or lower) and in the meanwhile the LVG is
on. The charging time (T
charge
) of the C
BOOT
is
the time in which both conditions are fulfilled and
it has to be long enough to chargethe capacitor.
The bootstrap driver introduces a voltage drop
due to
the DMOS R
DSON
(typical value: 125
Ohm). At low frequency this drop can be ne-
glected. Anyway
increasing the frequency
mustbe taken in to account.
The following equation is useful to compute the
drop on the bootstrapDMOS:
it
V
drop
=
I
charge
R
dson
→
V
drop
=
Q
gate
T
charge
R
dson
where Q
gate
is the gate charge of the external
power MOS, R
dson
is the on resistance of the
bootstrap DMOS, and T
charge
is the chargingtime
of the bootstrapcapacitor.
For example: using a power MOS with a total
gate charge of 30nC the drop on the bootstrap
DMOS is about1V, if the T
charge
is 5
μ
s. In fact:
V
drop
=
30nC
5
μ
s
125
~
0.8V
V
drop
has to be taken into account when the volt-
age drop on C
BOOT
is calculated: if this drop is
too high, or the circuit topology doesn’t allow a
sufficient charging time, an external diode can be
used.
TO LOAD
D99IN1056
H.V.
HVG
a
b
LVG
HVG
LVG
C
BOOT
TO LOAD
H.V.
C
BOOT
D
BOOT
V
BOOT
V
S
V
S
V
OUT
V
BOOT
V
OUT
Figure 4. Bootstrap Driver.
L6386
5/10
相關PDF資料 |
PDF描述 |
|---|---|
| L6387 | HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER |
| L6387D | HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER |
| L6452 | DUAL 13X16 MATRIX HEAD INK JET DRIVER |
| L6561D013TR | POWER FACTOR CORRECTOR |
| L6569 | HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| L6386D013TR | 功能描述:功率驅動器IC Hi-Volt Hi-Low Side RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| L6386E | 功能描述:功率驅動器IC Hi-Vltg and Lo Side Driver RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| L6386ED | 功能描述:功率驅動器IC Hi-Vltg and Lo Side Driver RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| L6386ED013TR | 功能描述:功率驅動器IC High Volt High Low Driver RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| L6387 | 功能描述:功率驅動器IC Hi-Volt Hi-Low Side RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。