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參數(shù)資料
| 型號： | L6384D |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | HIGH-VOLTAGE HALF BRIDGE DRIVER |
| 中文描述： | 高壓半橋驅(qū)動 |
| 文件頁數(shù)： | 5/10頁 |
| 文件大小： | 78K |
| 代理商： | L6384D |
BOOTSTRAP DRIVER
A bootstrap circuitry is neededto supply the high
voltage section. This function is normally accom-
plished by a high voltage fast recovery diode (fig.
4a). In the L6384 a patented integrated structure
replaces the external diode. It is realized by a
high voltage DMOS, driven synchronously with
the low side driver (LVG), with in series a diode,
as shownin fig. 4b
An internal charge pump (fig. 4b) provides the
DMOS driving voltage .
The diode connected in series to the DMOS has
been added to avoid undesirable turn on of it.
CBOOT selectionand charging
:
To choose the proper C
BOOT
value the external
MOS can be seen as an equivalent capacitor.
This capacitor C
EXT
is related to the MOS total
gate charge :
C
EXT
=
Q
gate
V
gate
The ratio betweenthe capacitorsC
EXT
andC
BOOT
is proportionalto the cyclical voltageloss .
It has to be:
C
BOOT
>>>C
EXT
e.g.: if Q
gate
is 30nC and V
gate
is 10V, C
EXT
is
3nF. With
C
BOOT
= 100nF the drop would be
300mV.
If HVG has to be supplied for a long time, the
C
BOOT
selectionhas to take into account also the
leakage losses.
e.g.: HVG steady state consumptionis lower than
200
μ
A, so if HVG T
ON
is
supply 1
μ
C to C
EXT
. This charge on a 1
μ
F ca-
5ms, C
BOOT
has to
pacitor means a voltagedrop of 1V.
The internal bootstrap driver gives great advan-
tages: the external fast recovery diode can be
avoided (it usually has great leakage current).
This structure can work only if V
OUT
is close to
GND (or lower) and in the meanwhile the LVG is
on. The charging time (T
charge
) of the C
BOOT
is
the time in which both conditions are fulfilled and
it has to be long enough to chargethe capacitor.
The bootstrap driver introduces a voltage drop
due to
the DMOS R
DSON
(typical value: 125
Ohm). At low frequency this drop can be ne-
glected. Anyway
increasing the frequency
mustbe taken in to account.
The following equation is useful to compute the
drop on the bootstrapDMOS:
it
V
drop
=
I
charge
R
dson
→
V
drop
=
Q
gate
T
charge
R
dson
where Q
gate
is the gate charge of the external
power MOS, R
dson
is the on resistance of the
bootstrap DMOS, and T
charge
is the chargingtime
of the bootstrapcapacitor.
For example: using a power MOS with a total
gate charge of 30nC the drop on the bootstrap
DMOS is about1V, if the T
charge
is 5
μ
s. In fact:
V
drop
=
30nC
5
μ
s
125
~ 0.8V
V
drop
hasto be takeninto accountwhenthevoltage
drop on C
BOOT
is calculated:if this dropis toohigh,
or the circuit topology doesn’t allow a sufficient
chargingtime, an externaldiodecan be used.
For both high and low side buffers @25
°
C Tamb
0
1
2
3
4
5
C (nF)
0
50
100
150
200
250
time
(nsec)
Tr
D99IN1015
Tf
Figure 2. TypicalRise and Fall Times vs.
Load Capacitance
0
2
4
6
8
10
12
14
V
S
(V)
10
10
2
10
3
10
4
Iq
(
μ
A)
D99IN1016
Figure 3. QuiescentCurrent vs. Supply
Voltage
L6384
5/10
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| L6384D | 制造商:STMicroelectronics 功能描述:IC MOSFET DRIVER HALF BRIDGE ((NW)) |
| L6384D | 制造商:STMicroelectronics 功能描述:600V HALF BRIDGE DRIVER SMD 6384 |
| L6384D013TR | 功能描述:功率驅(qū)動器IC Hi-Volt Half Bridge RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| L6384E | 功能描述:功率驅(qū)動器IC HV H-Bridge driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| L6384ED | 功能描述:功率驅(qū)動器IC HV H-Bridge driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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