參數(shù)資料
型號： L6382D
廠商： STMICROELECTRONICS
元件分類： 電源管理
英文描述： 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO20
封裝： ROHS COMPLIANT, SOP-20
文件頁數(shù)： 1/22頁
文件大?。?/td> 301K
代理商： L6382D
March 2007
Rev 6
1/22
22
L6382D
Power management unit
for microcontrolled ballast
Features
■ Integrated high-voltage start-up
■ 4 drivers for PFC, half-bridge & pre-heating
MOSFETs
■ 3.3V microcontroller compatible
■ Fully integrate power management for all
operating modes
■ Internal two point VCC regulator
■ Over-current protection with digital output
signal
■ Cross-conduction protection (interlocking)
■ Under voltage lock-out
■ Integrated bootstrap diode
Applications
■ Dimmable / non-dimmable ballast
Description
The L6382D is suitable for microcontrolled
electronic ballasts embedding a PFC stage and a
half-bridge stage. The L6382D includes 4
MOSFET driving stages (for the PFC, for the half
bridge, for the preheating MOSFET) plus a power
management unit (PMU) featuring also a
reference able to supply the microcontroller in any
condition.
Besides increasing the application efficiency, the
L6382D reduces the bill of materials because
different tasks (regarding drivers and power
management) are performed by a single IC, which
improves the application reliability.
SO-20
Figure 1.
Block diagram
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
L6382D_07 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Power management unit for microcontrolled ballast
L6382D5 功能描述:功率因數(shù)校正 IC Pwr management unit RoHS:否 制造商:Fairchild Semiconductor 開關(guān)頻率:300 KHz 最大功率耗散: 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Reel
L6382D5TR 功能描述:功率因數(shù)校正 IC Pwr management unit RoHS:否 制造商:Fairchild Semiconductor 開關(guān)頻率:300 KHz 最大功率耗散: 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Reel
L6382DTR 功能描述:電池管理 Pwr management unit RoHS:否 制造商:Texas Instruments 電池類型:Li-Ion 輸出電壓:5 V 輸出電流:4.5 A 工作電源電壓:3.9 V to 17 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:VQFN-24 封裝:Reel
L6384 功能描述:功率驅(qū)動器IC Hi-Volt Half Bridge RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
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