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參數(shù)資料
| 型號： | L6353D |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | SMART DRIVER FOR POWER MOS & IGBT |
| 中文描述： | 智能功率MOS驅(qū)動 |
| 文件頁數(shù)： | 8/11頁 |
| 文件大?。?/td> | 91K |
| 代理商： | L6353D |
V
CLAMP_PROG
=V
CL
6
with
7V < V
CL
<11V
Leaving the CLAMP_PROG pin floating the V
CL
level is set to 9V. If the pin is grounded the func-
tion is inhibited (i.e. no intermediate step during
the firing).
Third step
Parameter:
V
ONth
At the end of the t
MON_DELAY
the gate of the
driven device is pulled toward the V
POS
level in
order to ensure an appropriate drive to minimize
the power losses. The external power device is
considered in overload whenever the voltage on
its output,sensed via the V
ON_SENSE
pin, is above
V
ONth
. The comparison value is programmable
setting at a certain level, by means of a resistive
divider, the ON_LEV_PROG pin according to the
following formula:
V
ON_LEV_PROG
= V
ONth
. 0.17
with
5V
<
V
ONth
.
<
15V
and
V
ONth
. < V
CC
-1V.
If the ON_LEV_PROGpin is left floatingtheV
ONth
.
UndervoltageComparator Hysteresis
levelis set to 7.5V.
The overload status is signalled via the ALARM
pin, active LOW. To inhibite the V
ON
Monitorfunc-
tion, the V
SENSE
pins must be grounded.
THERMAL PROCEDURE
As the junction temperature raises, two different
events will take place. When the Over Tempera-
ture Threshold (T
th1
), set at 130
°
C is reached, the
ALARM output is activated (low level). If the tem-
perature keeps on raising, up to the Over Tem-
peratur Shutdown (T
th2
= 160
°
C Typ) the output
power device is turned off until the temperature
decrease. To prevent an oscillating behaviour
both the thresholds have a built-in hysteresis of
20
°
C.
UNDERVOLTAGE LOCK OUT
To avoid operation with non optimal drive of the
external power device, an Undervoltage Lockout
function is implemented. The OUT1 pin is forced
close to V
SS
until the V
CC
supply voltage has
reached
the
Undervoltage
(V
CCth2
) value. If the supply voltage falls below
the lower hysteresis value (i.e. V
CCth1
- V
CChys
)
the OUT1 will be again forced close to V
SS
. The
built-in hysteresis will thus avoid intermittent func-
tioning of the device at low supply voltage that
may have a superimposedripple.
Upper
Threshold
Vs
D94IN126B
Vccth
Vcchys
L6353
8/11
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