參數(shù)資料
型號: L6228N
廠商: 意法半導(dǎo)體
英文描述: DMOS DRIVER FOR BIPOLAR STEPPER MOTOR
中文描述: DMOS的驅(qū)動雙極步進電機
文件頁數(shù): 10/26頁
文件大?。?/td> 443K
代理商: L6228N
L6228
10/26
CIRCUIT DESCRIPTION
POWER STAGES and CHARGE PUMP
The L6228 integrates two independent Power MOS
Full Bridges. Each Power MOS has an R
DS(ON)
=
0.73
(typical value @ 25°C), with intrinsic fast free-
wheeling diode. Switching patterns are generated by
the PWM Current Controller and the Phase Se-
quence Generator (see below). Cross conduction
protection is achieved using a dead time (t
DT
= 1
μ
s
typical value) between the switch off and switch on of
two Power MOSFETSs in one leg of a bridge.
Pins VS
A
and VS
B
MUST be connected together to
the supply voltage V
S
. The device operates with a
supply voltage in the range from 8V to 52V. It has to
be noticed that the R
DS(ON)
increases of some per-
cents when the supply voltage is in the range from 8V
to 12V.
Using N-Channel Power MOS for the upper transis-
tors in the bridge requires a gate drive voltage above
the power supply voltage. The bootstrapped supply
voltage V
BOOT
is obtained through an internal Oscil-
lator and few external components to realize a
charge pump circuit as shown in Figure 6. The oscil-
lator output (VCP) is a square wave at 600KHz (typi-
cal) with 10V amplitude. Recommended values/part
numbers for the charge pump circuit are shown in Ta-
ble 1.
Table 1. Charge Pump External Components
Values
Figure 6. Charge Pump Circuit
LOGIC INPUTS
Pins CONTROL, HALF/FULL, CLOCK, RESET and
CW/CCW are TTL/CMOS and uC compatible logic
inputs. The internal structure is shown in Fig. 7. Typ-
ical value for turn-on and turn-off thresholds are re-
spectively V
th(ON)
= 1.8V and V
th(OFF)
= 1.3V.
Pin EN (Enable) has identical input structure with the
exception that the drain of the Overcurrent and ther-
mal protection MOSFET is also connected to this pin.
Due to this connection some care needs to be taken
in driving this pin. The EN input may be driven in one
of two configurations as shown in Fig. 8 or 9. If driven
by an open drain (collector) structure, a pull-up resis-
tor R
EN
and a capacitor C
EN
are connected as shown
in Fig. 8. If the driver is a standard Push-Pull structure
the resistor R
EN
and the capacitor C
EN
are connected
as shown in Fig. 9. The resistor R
EN
should be cho-
sen in the range from 2.2K
to 180K
. Recommend-
ed values for R
EN
and C
EN
are respectively 100K
and 5.6nF. More information on selecting the values
is found in the Overcurrent Protection section.
Figure 7. Logic Inputs Internal Structure
Figure 8. EN Pin Open Collector Driving
Figure 9. EN Pin Push-Pull Driving
C
BOOT
220nF
C
P
10nF
R
P
100
D1
1N4148
D2
1N4148
D2
C
BOOT
D1
R
P
C
P
V
S
VS
A
VCP
VBOOT
VS
B
D01IN1328
5V
D01IN1329
ESD
PROTECTION
5V
5V
OPEN
COLLECTOR
OUTPUT
R
EN
C
EN
EN
D01IN1330
ESD
PROTECTION
5V
PUSH-PULL
OUTPUT
R
EN
C
EN
EN
D01IN1331
ESD
PROTECTION
相關(guān)PDF資料
PDF描述
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