參數(shù)資料
型號(hào): L6226D
廠商: 意法半導(dǎo)體
英文描述: DMOS DUAL FULL BRIDGE DRIVER
中文描述: 偶的DMOS全橋驅(qū)動(dòng)器
文件頁數(shù): 6/22頁
文件大?。?/td> 404K
代理商: L6226D
L6226
6/22
(6)
(7)
(8)
Tested at 25°C in a restricted range and guaranteed by characterization.
See Fig. 1.
See Fig. 2.
V
th(OFF)
Turn-off Input Threshold
0.8
1.3
V
V
th(HYS)
Input Threshold Hysteresis
0.25
0.5
V
Switching Characteristics
t
D(on)EN
Enable to out turn ON delay time
(8)
I
LOAD
=1.4A, Resistive Load
500
800
ns
t
D(on)IN
Input to out turn ON delay time
I
LOAD
=1.4A, Resistive Load
(dead time included)
1.9
μs
t
RISE
Output rise time
(8)
I
LOAD
=1.4A, Resistive Load
40
250
ns
t
D(off)EN
Enable to out turn OFF delay time
(8)
I
LOAD
=1.4A, Resistive Load
500
800
1000
ns
t
D(off)IN
Input to out turn OFF delay time
I
LOAD
=1.4A, Resistive Load
500
800
1000
ns
t
FALL
Output Fall Time
(8)
I
LOAD
=1.4A, Resistive Load
40
250
ns
t
dt
Dead Time Protection
0.5
1
μs
f
CP
Charge pump frequency
-25°C<T
j
<125°C
0.6
1
MHz
Over Current Detection
I
s over
Input Supply Over Current
DetectionThreshold
-25°C<T
j
<125
°
C; RCL= 39 k
-25°C<T
j
<125
°
C; RCL= 5 k
-25°C<T
j
<125
°
C; RCL= GND
-10%
-10%
-30%
0.29
2.21
2.8
+10%
+10%
+30%
A
A
A
R
OPDR
Open Drain ON Resistance
I = 4mA
40
60
t
OCD(ON)
OCD Turn-on Delay Time (8)
I = 4mA; C
EN
< 100pF
200
ns
t
OCD(OFF)
OCD Turn-off Delay Time (8)
I = 4mA; C
EN
< 100pF
100
ns
ELECTRICAL CHARACTERISTICS
(continued)
(T
amb
= 25 °C, V
s
= 48V, unless otherwise specified)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
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