參數(shù)資料
型號(hào): L6226
廠商: 意法半導(dǎo)體
英文描述: DMOS DUAL FULL BRIDGE DRIVER
中文描述: 偶的DMOS全橋驅(qū)動(dòng)器
文件頁數(shù): 8/22頁
文件大?。?/td> 404K
代理商: L6226
L6226
8/22
CIRCUIT DESCRIPTION
POWER STAGES and CHARGE PUMP
The L6226 integrates two independent Power MOS
Full Bridges. Each Power MOS has an Rd-
son=0.73ohm (typical value @ 25°C), with intrinsic
fast freewheeling diode. Cross conduction protection
is achieved using a dead time (td = 1
μ
s typical) be-
tween the switch off and switch on of two Power MOS
in one leg of a bridge.
Using N Channel Power MOS for the upper transis-
tors in the bridge requires a gate drive voltage above
the power supply voltage. The Bootstrapped (Vboot)
supply is obtained through an internal Oscillator and
few external components to realize a charge pump
circuit as shown in Figure 3. The oscillator output
(VCP) is a square wave at 600kHz (typical) with 10V
amplitude. Recommended values/part numbers for
the charge pump circuit are shown in Table1.
Table 1. Charge Pump External Components
Values
Figure 3. Charge Pump Circuit
LOGIC INPUTS
Pins IN1
A
, IN2
A
, IN1
B
, IN2
B
, EN
A
and EN
B
are TTL/
CMOS and uC compatible logic inputs. The internal
structure is shown in Fig. 4. Typical value for turn-on
and turn-off thresholds are respectively Vthon=1.8V
and Vthoff = 1.3V.
Pins EN
A
and EN
B
are commonly used to implement
Overcurrent and Thermal protection by connecting
them respectively to the outputs OCD
A
and OCD
B
,
which are open-drain outputs. If that type of connec-
tion is chosen, some care needs to be taken in driving
these pins. Two configurations are shown in Fig. 5
and Fig. 6. If driven by an open drain (collector) struc-
ture, a pull-up resistor R
EN
and a capacitor C
EN
are
connected as shown in Fig. 5. If the driver is a stan-
dard Push-Pull structure the resistor R
EN
and the ca-
pacitor C
EN
are connected as shown in Fig. 6. The
resistor R
EN
should be chosen in the range from
2.2k
to 180K
. Recommended values for R
EN
and
C
EN
are respectively 100K
and 5.6nF. More infor-
mation on selecting the values is found in the Over-
current Protection section.
Figure 4. Logic Inputs Internal Structure
Figure 5. EN
A
and EN
B
Pins Open Collector
Driving
Figure 6. EN
A
and EN
B
Pins Push-Pull Driving
TRUTH TABLE
X
High Z = High Impedance Output
= Don't care
C
BOOT
C
P
R
P
D1
D2
220nF
10nF
100
1N4148
1N4148
D2
C
BOOT
D1
R
P
C
P
V
S
VS
A
VCP
VBOOT
VS
B
D01IN1328
INPUTS
IN1
X
L
H
L
H
OUTPUTS
OUT1
High Z
GND
Vs
GND
Vs
EN
L
H
H
H
H
IN2
X
L
L
H
H
OUT2
High Z
GND
GND
Vs
Vs
5V
D01IN1329
ESD
PROTECTION
5V
5V
OPEN
COLLECTOR
OUTPUT
R
EN
C
EN
EN
A
or EN
B
OCD
A
or OCD
B
D02IN1355
5V
PUSH-PULL
OUTPUT
R
EN
C
EN
EN
A
or EN
B
D02IN1356
OCD
A
or OCD
B
相關(guān)PDF資料
PDF描述
L6226D DMOS DUAL FULL BRIDGE DRIVER
L6226N DMOS DUAL FULL BRIDGE DRIVER
L6226PD DMOS DUAL FULL BRIDGE DRIVER
L6228 DMOS DRIVER FOR BIPOLAR STEPPER MOTOR
L6228D DMOS DRIVER FOR BIPOLAR STEPPER MOTOR
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