參數(shù)資料
型號: L6206PD
廠商: 意法半導(dǎo)體
英文描述: DMOS DUAL FULL BRIDGE DRIVER
中文描述: 偶的DMOS全橋驅(qū)動器
文件頁數(shù): 8/23頁
文件大?。?/td> 413K
代理商: L6206PD
L6206
8/23
CIRCUIT DESCRIPTION
POWER STAGES and CHARGE PUMP
The L6206 integrates two independent Power MOS
Full Bridges. Each Power MOS has an Rd-
son=0.3ohm (typical value @ 25°C), with intrinsic
fast freewheeling diode. Cross conduction protection
is achieved using a dead time (td = 1
μ
s typical) be-
tween the switch off and switch on of two Power MOS
in one leg of a bridge.
Using N Channel Power MOS for the upper transis-
tors in the bridge requires a gate drive voltage above
the power supply voltage. The Bootstrapped (Vboot)
supply is obtained through an internal Oscillator and
few external components to realize a charge pump
circuit as shown in Figure 3. The oscillator output
(VCP) is a square wave at 600kHz (typical) with 10V
amplitude. Recommended values/part numbers for
the charge pump circuit are shown in Table1.
Table 1. Charge Pump External Components
Values
Figure 3. Charge Pump Circuit
LOGIC INPUTS
Pins IN1
A
, IN2
A
, IN1
B
, IN2
B
, EN
A
and EN
B
are TTL/
CMOS and uC compatible logic inputs. The internal
structure is shown in Fig. 4. Typical value for turn-on
and turn-off thresholds are respectively Vthon=1.8V
and Vthoff = 1.3V.
Pins EN
A
and EN
B
are commonly used to implement
Overcurrent and Thermal protection by connecting
them respectively to the outputs OCD
A
and OCD
B
,
which are open-drain outputs. If that type of connec-
tion is chosen, some care needs to be taken in driving
these pins. Two configurations are shown in Fig. 5
and Fig. 6. If driven by an open drain (collector) struc-
ture, a pull-up resistor R
EN
and a capacitor C
EN
are
connected as shown in Fig. 5. If the driver is a stan-
dard Push-Pull structure the resistor R
EN
and the ca-
pacitor C
EN
are connected as shown in Fig. 6. The
resistor R
EN
should be chosen in the range from
2.2k
to 180K
. Recommended values for R
EN
and
C
EN
are respectively 100K
and 5.6nF. More infor-
mation on selecting the values is found in the Over-
current Protection section.
Figure 4. Logic Inputs Internal Structure
Figure 5. EN
A
and EN
B
Pins Open Collector
Driving
Figure 6. EN
A
and EN
B
Pins Push-Pull Driving
TRUTH TABLE
X
High Z = High Impedance Output
= Don't care
C
BOOT
C
P
R
P
D1
D2
220nF
10nF
100
1N4148
1N4148
D2
C
BOOT
D1
R
P
C
P
V
S
VS
A
VCP
VBOOT
VS
B
D01IN1328
INPUTS
IN1
X
L
H
L
H
OUTPUTS
OUT1
High Z
GND
Vs
GND
Vs
EN
L
H
H
H
H
IN2
X
L
L
H
H
OUT2
High Z
GND
GND
Vs
Vs
5V
D01IN1329
ESD
PROTECTION
5V
5V
OPEN
COLLECTOR
OUTPUT
R
EN
C
EN
EN
A
or EN
B
OCD
A
or OCD
B
D02IN1355
5V
PUSH-PULL
OUTPUT
R
EN
C
EN
EN
A
or EN
B
D02IN1356
OCD
A
or OCD
B
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