參數(shù)資料
型號: L6206N
廠商: 意法半導(dǎo)體
英文描述: CAP CER 130PF 100V 5% C0G 0805
中文描述: 偶的DMOS全橋驅(qū)動器
文件頁數(shù): 15/23頁
文件大小: 413K
代理商: L6206N
15/23
L6206
To operate the device in parallel and maintain a lower over current threshold, Half Bridge 1 and the Half Bridge
2 of the Bridge A can be connected in parallel and the same done for the Bridge B as shown in Figure 14. In
this configuration, the peak current for each half bridge is still limited by the bond wires for the supply and sense
pins so the dissipation in the device will be reduced, but the peak current rating is not increased.
When connected in this configuration the over current detection circuit, senses the sum of the current in upper
devices connected in parallel. With the enables connected in parallel, an over current will turn of both bridges.
Since the circuit senses the total current in the upper devices, the over current threshold is equal to the threshold
set the resistor R
CLA
or R
CLB
in figure 14. R
CLA
sets the threshold when outputs OUT1
A
and OUT2
A
are high
and resistor R
CLB
sets the threshold when outputs OUT1
B
and OUT2
B
are high.
It is recommended to use R
CLA
= R
CLB
.
In this configuration, the resulting bridge has the following characteristics.
- Equivalent Device: FULL BRIDGE
- R
DS(ON)
0.15
Typ. Value @ T
J
= 25°C
- 2.8A max RMS Load Current
- 5.6A max OCD Threshold
Figure 14. Parallel connection with lower Overcurrent Threshold
C
P
VBOOT
C
BOOT
R
P
D
2
D
1
C
2
OUT1
A
LOAD
OCD
A
EN
A
OCD
B
EN
B
1
5
21
18
19
8
16
OUT2
A
GND
GND
GND
GND
PROGCL
A
OUT2
B
OUT1
B
VS
A
VS
B
POWER
GROUND
-
SIGNAL
GROUND
+
VS
8-52V
DC
4
VCP
C
1
SENSE
A
20
IN
A
IN1
A
IN2
A
2
6
7
9
C
EN
R
EN
EN
23
IN2
B
12
IN1
B
IN
B
11
14
24
17
3
15
22
SENSE
B
R
CLA
10
PROGCL
B
13
R
CLB
D02IN1361
相關(guān)PDF資料
PDF描述
L6206PD DMOS DUAL FULL BRIDGE DRIVER
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L6221N Quad Darlington Switches(四通道達(dá)林頓晶體管開關(guān))
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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