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參數(shù)資料
| 型號(hào)： | L486 |
| 廠商： | IXYS Corporation |
| 英文描述： | IGBT Modules Sixpack, H Bridge |
| 中文描述： | IGBT模塊Sixpack，H橋 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 144K |
| 代理商： | L486 |
2004 IXYS All rights reserved
2 - 4
MWI 100-12 E8
MKI 100-12 E8
4
IXYS reserves the right to change limits, test conditions and dimensions.
Equivalent Circuits for Simulation
Conduction
IGBT (typ. at V
GE
= 15 V; T
J
= 125°C)
V
0
= 0.95 V; R
0
= 14 m
Free Wheeling Diode (typ. at T
J
= 125°C)
V
0
= 1.3 V; R
0
= 7 m
Thermal Response
IGBT (typ.)
C
th1
= 0.389 J/K; R
th1
= 0.139 K/W
C
th2
= 2.154 J/K; R
th2
= 0.051 K/W
Free Wheeling Diode (typ.)
C
th1
= 0.301 J/K; R
th1
= 0.24 K/W
C
th2
= 2.005 J/K; R
th2
= 0.062 K/W
Module
Symbol
Conditions
Maximum Ratings
T
VJ
T
JM
T
stg
operating
-40...+125
+150
-40...+125
°
C
°
C
°
C
V
ISOL
I
ISOL
≤
1 mA; 50/60 Hz
2500
V~
M
d
Mounting torque (M5)
2.7 - 3.3
Nm
Symbol
Conditions
Characteristic Values
min.
typ.
max.
R
pin-chip
1.8
m
d
S
d
A
Creepage distance on surface
Strike distance in air
10
10
mm
mm
R
thCH
with heatsink compound
0.01
K/W
Weight
300
g
Diodes
Symbol
Conditions
Maximum Ratings
I
F25
I
F80
T
C
= 25°C
T
C
= 80°C
200
130
A
A
Symbol
Conditions
Characteristic Values
min.
typ.
max.
V
F
I
F
= 100 A; V
GE
= 0 V; T
VJ
= 25°C
2.3
1.7
2.6
V
V
T
VJ
= 125°C
I
RM
t
rr
I
F
= 120 A; di
F
/dt = -750 A/μs; T
VJ
= 125°C
V
R
= 600 V; V
GE
= 0 V
58
190
A
ns
R
thJC
(per diode)
0.3 K/W
pins 5, 6, 7, 8 and 17 for MWI only
Dimensions in mm (1 mm = 0.0394")
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