參數(shù)資料
型號(hào): L412
廠商: IXYS Corporation
英文描述: High Voltage BIMOSFET
中文描述: 高壓BIMOSFET
文件頁數(shù): 3/4頁
文件大?。?/td> 91K
代理商: L412
2000 IXYS All rights reserved
3 - 4
V
CE
- Volts
0
400
800
1200
1600
I
C
0
5
10
15
V
F
- Volts
0
2
4
6
8
10
I
F
0
5
10
15
20
25
30
V
CE
- Volts
0
2
4
6
8
10
12
14
16
18
I
C
0
5
10
15
20
25
30
Q
G
- nanocoulombs
0
10
20
30
40
50
V
G
0
2
4
6
8
10
12
14
16
V
CE
- Volts
0
2
4
6
8
10
12
14
16
18
I
C
0
5
10
15
20
25
30
13V
T
J
= 25
°
C
V
GE
= 17V
T
J
= 125
°
C
V
CE
= 600V
I
C
= 5A
T
J
= 125
°
C
V
CEK
< V
CES
15V
V
GE
- Volts
4
6
8
10
12
14
I
C
0
5
10
15
20
25
30
13V
V
GE
= 17V
15V
V
CE
= 20V
T
J
= 125
°
C
T
J
= 25
°
C
T
J
= 125
°
C
T
J
= 25
°
C
IXBF 9N140
IXBF 9N160
Fig. 1
Typ. Output Characteristics
Fig. 2
Typ. Output Characteristics
Fig. 3
Typ. Transfer Characteristics
Fig. 4
Typ. Characteristics of Reverse
Conduction
Fig. 5
Typ. Gate Charge characteristics
Fig. 6
Reverse Biased Safe Operating Area
RBSOA
IXBF 9N140
IXBF 9N160
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