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參數(shù)資料
| 型號： | L356 |
| 廠商： | IXYS Corporation |
| 英文描述： | HiPerDynFRED Epitaxial Diode with soft recovery |
| 中文描述： | HiPerDynFRED外延與軟恢復二極管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 44K |
| 代理商： | L356 |
2004 IXYS All rights reserved
2 - 2
DSEP 9-06CR
200
600
-di
F
/dt
1000
0
400
800
A/
μ
s
30
35
40
45
0.0001
0.001
0.01
0.1
1
10
0.01
0.1
1
10
0
40
80
120
160
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
K
f
T
VJ
°C
t
s
K/W
0
200
400
600
di
F
/dt
800
A/
μ
s
1000
0
20
40
60
80
0.0
0.4
0.8
1.2
1.6
V
FR
V
200
600
1000
0
400
800
A/
μ
s
0
5
10
15
20
100
1000
0.0
0.1
0.2
0.3
0.4
0
1
2
3
4
5
0
5
10
15
20
25
30
A
I
RM
Q
r
I
F
V
F
-di
F
/dt
-di
F
/dt
A
V
μC
t
rr
ns
t
fr
Z
thJC
A/
μ
s
μ
s
DSEP 9-06CR
T
VJ
= 150°C
T
VJ
= 100°C
T
VJ
= 25°C
I
F
= 20 A
I
F
= 10 A
I
F
= 5 A
I
F
= 20 A
I
F
= 10 A
I
F
= 5 A
I
F
= 20 A
I
F
= 10 A
I
F
= 5 A
T
VJ
= 100°C
I
F
= 10 A
T
VJ
= 100°C
V
R
= 300 V
T
VJ
= 100°C
V
R
= 300 V
T
VJ
= 100°C
V
R
= 300 V
I
RM
Q
R
V
FR
t
rr
Fig. 3 Typ. peak reverse current
I
RM
versus -di
F
/dt
Fig. 2 Typ. reverse recovery charge
Q
r
versus -di
F
/dt
Fig. 1 Max. forward current
I
F
versus V
F
Fig. 4 Typ. dynamic parameters
Q
r
, I
RM
versus T
VJ
Fig. 5 Typ. recovery time
t
rr
versus -di
F
/dt
Fig. 6 Typ. peak forward voltage
V
FR
and t
fr
versus di
F
/dt
Fig. 7 Transient thermal resistance junction to case
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