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參數(shù)資料
| 型號： | l345 |
| 廠商： | IXYS Corporation |
| 英文描述： | Thyristor Module |
| 中文描述： | 晶閘管模塊 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 48K |
| 代理商： | L345 |
2000 IXYS All rights reserved
2 - 2
Symbol
Conditions
Characteristic Values
I
RRM
, I
DRM
T
VJ
= T
VJM
; V
R
= V
RRM
; V
D
= V
DRM
20
mA
V
T
, V
F
I
T
, I
F
= 200 A; T
VJ
= 25 C
1.70
V
V
T0
r
T
T
VJ
= 125 C; For power-loss calculations only
T
VJ
= T
VJM
0.85
4.8
V
m
V
GT
V
D
= 6 V;
T
VJ
= 25 C
T
VJ
= -40 C
T
VJ
= 25 C
T
VJ
= -40 C
1.4
1.6
100
200
V
V
I
GT
V
D
= 6 V;
mA
mA
V
GD
I
GD
T
VJ
= T
VJM
;
V
D
=
2
/
3
V
DRM
0.2
10
V
mA
I
L
T
VJ
= 25 C; t
P
= 10 μs, V
= 6 V
I
G
= 0.45 A; di
G
/dt = 0.45 A/μs
450
mA
I
H
T
VJ
= 25 C; V
D
= 6 V; R
GK
=
200
mA
t
gd
T
VJ
= 25 C; V
D
= V
I
G
= 0.45 A; di
G
/dt = 0.45 A/μs
2
μs
t
q
T
VJ
= T
; I
= 120 A, t
= 200 μs; -di/dt = 10 A/μstyp.
V
R
= 100 V; dv/dt = 20 V/μs; V
D
=
2
/
3
V
DRM
150
μs
Q
S
I
RM
T
VJ
= T
VJM
; I
T
, I
F
= 50 A, -di/dt = 0.64 A/μs
110
12
μC
A
R
thJC
per thyristor/diode; DC current
per module
per thyristor/diode; DC current
0.5
0.25
0.1
K/W
K/W
K/W
R
thCH
typ.
d
S
d
A
a
Creepage distance on surface
Strike distance through air
Maximum allowable acceleration
12.7
9.6
50
mm
mm
m/s
2
Optional accessories for module-type MCC 60 version 1 B
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
Type
ZY 200L
(L = Left for pin pair 4/5)
Type
ZY 200R
(R = right for pin pair 6/7)
UL 758, style 1385,
CSA class 5851, guide 460-1-1
MCC60
10
100
1000
1
10
100
1000
10
0
10
1
10
2
10
3
10
4
0.1
1
10
I
G
V
G
mA
mA
I
G
1: I
GT
, T
VJ
= 125
°
C
2: I
GT
, T
VJ
= 25
°
C
3: I
GT
, T
VJ
= -40
°
C
μ
s
t
gd
V
4: P
GAV
= 0.5 W
5: P
GM
= 5 W
6: P
GM
= 10 W
I
GD
, T
VJ
= 125
°
C
3
4
2
1
5
6
Limit
typ.
T
VJ
= 25
°
C
Fig. 1 Gate trigger characteristics
Fig. 2 Gate trigger delay time
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