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參數(shù)資料
| 型號： | L2SA1774T1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | General Purpose Transistors PNP Silicon |
| 中文描述： | 通用硅晶體管進步黨 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 210K |
| 代理商： | L2SA1774T1 |
LESHAN RADIO COMPANY, LTD.
1
BASE
COLLECTOR
3
General Purpose Transistors
PNP Silicon
2
EMITTER
L2SA1774*T1
1
3
2
!
Absolute maximum ratings
(Ta=25
°
C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Parameter
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
60
V
V
V
A (DC)
C
C
50
6
0.15
W
0.15
150
55~
+
150
Symbol
Limits
Unit
!
Electrical characteristics
(Ta=25
°
C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Min.
60
50
6
120
140
4.0
0.1
0.1
560
0.5
5.0
V
I
C
=
50
μ
A
I
C
=
1
μ
A
I
E
=
50
μ
A
V
CB
=
60V
V
EB
=
6V
V
CE
=
6V, I
C
=
1mA
I
C
/I
B
=
50mA/
5mA
V
CE
=
12V, I
E
=
2mA, f
=
30MHz
V
CB
=
12V, I
E
=
0A, f
=
1MHz
V
V
μ
A
μ
A
V
MHz
pF
Typ.
Max.
Unit
Conditions
SC-89
h
FE
values are classified as follows:
Item
Q
R
S
h
FE
120~270
180~390
270~560
!
Device marking
!
L2SA1774QT1=FQ L2SA1774ST1=FS L2SA1774RT1=FR
L2SA1774*T1
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1
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3
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