參數(shù)資料
型號(hào): L291
廠商: IXYS Corporation
英文描述: Single Phase Rectifier Bridge
中文描述: 單相整流橋
文件頁(yè)數(shù): 2/2頁(yè)
文件大小: 67K
代理商: L291
2004 IXYS All rights reserved
2 - 2
IXYS reserves the right to change limits, test conditions and dimensions.
VBO 50
4
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current per diode
I
FSM
: Crest value. t: duration
Fig.5 Maximum forward current
at case temperature
Fig. 4 Power dissipation versus direct output current and ambient temperature
Fig. 3
i
2
dt versus time
(1-10ms) per diode or thyristor
Fig. 6 Transient thermal impedance per diode or thyristor, calculated
0.5
1
1.5
2
2.5
0
50
100
150
200
V [V]
IF
[A]
1:T = 150°
VJ C
2:T = 25°C
1
2
0.4
0.6
0.8
1
1.2
1.4
1.6
10
10
10
10
t[ms]
I (A)
TVJ=45°C TVJ=150°C
750 670
I
F(OV)
0 V
1/2 V
1 V
2
4
6
10
TVJ=45°C
TVJ=150°C
t [ms]
1
10
10
10
2
2
3
4
As
50
100
150
200
0
10
30
50
70
DC
sin.180°
rec.120°
c.60°
re
.30°
T (°C)
I
[A]
0.01
0.1
1
10
1
2
3
4
K/W
Zth
t[s]
ZthJK
ZthJC
30
0
20
40
60
80
100
[W]
TC
95
100
105
110
115
120
125
130
135
140
150
DC
sin.180°
rec.120°
rec.60°
rec.30°
5.35
2.35
1.35
0.85
0.6 0.35
= RTHCA [K/W]
IF10
[A]
Tamb
[K]
0
50
100
150
PVTOT
PSB 55
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