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參數(shù)資料
| 型號： | L182 |
| 廠商： | IXYS Corporation |
| 英文描述： | HiPerFRED Epitaxial Diode with soft recovery |
| 中文描述： | HiPerFRED外延與軟恢復(fù)二極管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 35K |
| 代理商： | L182 |
2000 IXYS All rights reserved
2 - 2
DSEP 8-06A
200
600
-di
F
/dt
1000
0
400
800
A/
s
70
80
90
100
110
120
ns
0.00001
0.0001
0.001
0.01
0.1
1
0.001
0.01
0.1
1
10
0
40
80
120
160
0.0
0.5
1.0
1.5
2.0
K
f
T
VJ
°
C
t
s
K/W
0
200
400
600
di
F
/dt
800
A/
m
s
1000
0
5
10
15
20
0.0
0.3
0.6
0.9
1.2
V
FR
V
200
600
1000
0
400
800
A/
m
s
0
10
20
30
40
100
1000
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
nC
0.0
0.5
1.0
1.5
2.0
2.5
0
5
10
15
20
25
30
A
I
RM
Q
r
I
F
V
F
-di
F
/dt
-di
F
/dt
A
V
t
rr
t
fr
Z
thJC
A/
m
s
μ
s
DSEP 8-06A/DSEC16-06A
I
F
= 20A
I
F
= 10A
I
F
= 5A
T
VJ
= 100
°
C
V
R
= 300V
T
VJ
= 100
°
C
I
F
= 10A
Fig. 3 Peak reverse current I
RM
versus -di
F
/dt
Fig. 2 Reverse recovery charge Q
r
versus -di
F
/dt
Fig. 1 Forward current I
F
versus V
F
T
VJ
= 100
°
C
V
R
= 300V
T
VJ
= 100
°
C
V
R
= 300V
I
F
= 20A
I
F
= 10A
I
F
= 5A
Q
r
I
RM
Fig. 4 Dynamic parameters Q
r
, I
RM
versus T
VJ
Fig. 5 Recovery time t
rr
versus -di
F
/dt
Fig. 6 Peak forward voltage V
FR
and t
fr
versus di
F
/dt
I
F
= 20A
I
F
= 10A
I
F
= 5A
t
fr
V
FR
Fig. 7 Transient thermal resistance junction to case
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
1.449
0.5578
0.4931
t
i
(s)
0.0052
0.0003
0.0169
1
2
3
T
VJ
=150
°
C
T
VJ
=100
°
C
T
VJ
= 25
°
C
NOTE: Fig. 2 to Fig. 6 shows typical values
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