- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄358720 > L033MU01RI (Spansion Inc.) 32 Megabit (4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control PDF資料下載
參數(shù)資料
| 型號(hào)： | L033MU01RI |
| 廠商： | Spansion Inc. |
| 英文描述： | 32 Megabit (4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| 中文描述： | 32兆位（4個(gè)M × 8位）的MirrorBit⑩3.0伏特，只有統(tǒng)一部門(mén)閃存記憶體與VersatileI /輸出⑩控制 |
| 文件頁(yè)數(shù)： | 54/61頁(yè) |
| 文件大?。?/td> | 772K |
| 代理商： | L033MU01RI |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)當(dāng)前第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)
52
Am29LV033MU
September 12, 2006
D A T A S H E E T
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, 3.0 V V
CC
, Programming specification assume that
all bits are programmed to 00h.
2. Maximum values are measured at V
CC
= 3.0, worst case temperature. Maximum values are valid up to and including 100,000
program/erase cycles.
3. Byte programming specification is based upon a single byte programming operation not utilizing the write buffer.
4. For 1-32 bytes programmed in a single write buffer programming operation.
5. Effective write buffer specification is calculated on a per-per-byte basis for a 32-byte write buffer operation.
6. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
7. System-level overhead is the time required to execute the command sequence (s) for the program command. See Tables 12 and
13 for further information on command definitions.
8. The device has a minimum erase and program cycle endurance of 100,000 cycles.
LATCHUP CHARACTERISTICS
Note:
Includes all pins except V
CC
. Test conditions: V
CC
= 3.0 V, one pin at a time.
TSOP PIN AND BGA PACKAGE CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25°C, f = 1.0 MHz.
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.5
3.5
sec
Excludes 00h programming
prior to erasure (Note 6)
Chip Erase Time
32
64
sec
Single Byte Program Time (Note 3)
60
600
μs
Excludes system level
overhead (Note 7)
Accelerated Single Byte Program Time (Note 3)
54
540
μs
Total Write Buffer Program Time (Note 4)
240
1200
μs
Effective Write Buffer Program Time (Note 5)
7.5
38
μs
Total Accelerated Write Buffer Program Time (Note 4)
200
1040
μs
Effective Accelerated Write Buffer Program Time (Note 5)
6.25
33
μs
Chip Program Time
31.5
73
sec
Description
Min
Max
Input voltage with respect to V
SS
on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to V
SS
on all I/O pins
–1.0 V
V
CC
+ 1.0 V
V
CC
Current
–100 mA
+100 mA
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
TSOP
6
7.5
pF
BGA
4.2
5.0
pF
C
OUT
Output Capacitance
V
OUT
= 0
TSOP
8.5
12
pF
BGA
5.4
6.5
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
TSOP
7.5
9
pF
BGA
3.9
4.7
pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| L034 | MegaMOSTMFET Module |
| L042 | Half Controlled Single Phase Rectifier Bridge |
| L048 | Three Phase Half Controlled Rectifier Bridge, B6HK |
| L081 | Thyristor Modules Thyristor/Diode Modules |
| l104 | Phase Control Thyristors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| L033MU01VI | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| L033MU11RI | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| L033MU11VI | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| L033MU12RI | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| L033MU12VI | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。