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參數(shù)資料
| 型號(hào)： | KTX512T |
| 廠商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE |
| 中文描述： | 外延平面PNP晶體管肖特基型二極管 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 108K |
| 代理商： | KTX512T |
2002. 1. 24
2/5
KTX512T
Revision No : 1
ELECTRICAL CHARACTERISTICS (Ta=25
)
Transistor Q
1
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Forward Voltage
V
F
(1)
I
F
=10mA
-
-
0.3
V
V
F
(2)
I
F
=500mA
-
-
0.5
V
Reverse Current
I
R
V
R
=10V
-
-
30
A
Total Capacitance
C
T
V
R
=10V, f=1MHz
-
20
-
pF
Diode (SBD) D
1
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-12V, I
E
=0
-
-
-0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=-4V, I
C
=0
-
-
-0.1
A
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=-10
A, I
E
=0
-20
-
-
V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-1mA, I
B
=0
-20
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=-10
A, I
C
=0
-5
-
-
V
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-1.5A, I
B
=-30mA
-
-130
-165
mV
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=-1.5A, I
B
=-30mA
-
-0.85
-1.2
V
DC Current Gain
h
FE
V
CE
=-2V, I
C
=-500mA
200
-
560
Transition Frequency
f
T
V
CE
=-2V, I
C
=-500mA
-
160
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, f=1MHz
-
45
-
pF
Swiitching
Time
Turn-On Time
t
on
-
30
-
nS
Storage Time
t
stg
-
90
-
Fall Time
t
f
-
10
-
I
B1
B2
I
INPUT
OUTPUT
50
1Κ
220
μ
F
PW=20
μ
s
DC 1%
470
μ
F
R
V
L
R
V =5V
V =-5V
-20I =20I =I =-1.5A
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