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參數(shù)資料
| 型號： | KTX511T |
| 廠商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE |
| 中文描述： | 外延平面PNP晶體管肖特基型二極管 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 110K |
| 代理商： | KTX511T |
2002. 1. 24
2/5
KTX511T
Revision No : 1
ELECTRICAL CHARACTERISTICS (Ta=25
)
Transistor Q
1
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-12V, I
E
=0
-
-
-0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=-4V, I
C
=0
-
-
-0.1
A
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=-10
A, I
E
=0
20
-
-
V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-1mA, I
B
=0
20
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=-10
A, I
C
=0
-5
-
-
V
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-750mA, I
B
=-15mA
-
-120
-180
mV
I
C
=-1.5A, I
B
=-30mA
-
-210
-320
mV
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=-750mA, I
B
=-15mA
-
-0.85
-1.2
V
DC Current Gain
h
FE
V
CE
=-2V, I
C
=-100mA
200
-
560
Transition Frequency
f
T
V
CE
=-2V, I
C
=-300mA
-
210
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, f=1MHz
-
30
-
pF
Swiitching
Time
Turn-On Time
t
on
-
50
-
nS
Storage Time
t
stg
-
90
-
Fall Time
t
f
-
15
-
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Reverse Voltage
V
R
I
R
=1mA
30
-
-
V
Forward Voltage
V
F
I
F
=0.7A
-
-
0.55
V
Reverse Current
I
R
V
R
=30V
80
A
Total Capacitance
C
T
V
R
=0V, f=1MHz
-
190
-
pF
Reverse Recover Time
t
rr
I
F
=I
R
=100mA
-
7.5
-
ns
Diode (SBD) D
1
I
B1
B2
I
INPUT
OUTPUT
50
220
μ
F
PW=20
μ
s
DC 1%
470
μ
F
R
V
B
R
L
R
V =5V
V =-5V
-20I =20I =I =-750mA
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| KTX512T | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE |
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| KTY10-6 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Temperature Sensors |
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