參數(shù)資料
型號(hào)： KTX303U
廠商： KEC Holdings
英文描述： EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE (SWITCHING, LOW VOLTAGE HIGH SPEED SWITCHING)
中文描述： 外延平面PNP晶體管肖特基型二極管（開(kāi)關(guān)，低電壓高速開(kāi)關(guān)）
文件頁(yè)數(shù)： 1/4頁(yè)
文件大小： 403K
代理商： KTX303U
2003. 3. 11
1/4
SEMICONDUCTOR
TECHNICAL DATA
KTX303U
EPITAXIAL PLANAR PNP TRANSISTOR
SCHOTTKY BARRIER TYPE DIODE
Revision No : 1
SWITCHING APPLICATION.
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES
Including two(TR, Diode) devices in USV.
(Ultra Super Mini type with 5 leads)
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
DIM
A
MILLIMETERS
2.00 0.20
+
+
B
D
G
USV
1.25+
2.1+
0.2+0.10/-0.05
0-0.1
+
0.9 0.1
0.65
0.15+0.1/-0.05
B1
H
C
T
G
1
3
2
B
B1
D
A
H
T
5
4
C
C
A
1.3 0.1
A1
1. D ANODE
2. Q BASE
3. Q EMITTER
4. Q COLLECTOR
5. D CATHODE
MAXIMUM RATINGS (Ta=25
TRANSISTOR Q
1
)
EQUIVALENT CIRCUIT (TOP VIEW)
1
D1
Q1
2
3
5
4
CI
Type Name
4
1
2
3
5
Marking
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-15
V
Collector-Emitter Voltage
V
CEO
-12
V
Emitter-Base Voltage
V
EBO
-6
Collector Current
I
C
-500
I
CP
*
-1
A
Collector Power Dissipation
P
C
100
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55~125
DIODE (SBD) D
1
CHARACTERISTIC
SYMBOL
RATING
UNIT
Maximum (Peak) Reverse Voltage
V
RM
30
V
Reverse Voltage
V
R
30
V
Maximum (Peak) Forward Current
I
FM
300
Average Forward Current
I
O
200
Surge Current (10mS)
I
FSM
1
A
Junction Temperature
T
j
125
Storage Temperature Range
T
stg
-55
125
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