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參數(shù)資料
| 型號(hào)： | KTC812T |
| 廠商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR NPN TRANSISTOR |
| 中文描述： | 外延平面NPN晶體管 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 408K |
| 代理商： | KTC812T |
2002. 12. 5
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC812T
Revision No : 1
FOR MUTING AND SWITCHING APPLICATION.
FEATURES
High Emitter-Base Voltage : V
EBO
=25V(Min.)
High Reverse h
FE
: Reverse h
FE
=150(Typ.) (V
CE
=-2V, I
C
=-4mA)
Low on Resistance : R
ON
=1
(Typ.), (I
B
=5mA)
MAXIMUM RATING (Ta=25
)
DIM
MILLIMETERS
+
A
B
D
E
TS6
2.9 0.2
1.6+0.2/-0.1
+
0.70 0.05
0.4+
2.8+0.2/-0.3
+
1.9 0.2
0.95
+
0.16 0.05
0.00-0.10
0.25+0.25/-0.15
C
F
G
H
I
J
K
0.60
L
0.55
A
F
G
G
D
K
K
B
E
C
L
H
J
J
I
2
3
5
1
6
4
1. Q EMITTER
2. Q BASE
3. Q COLLECTOR
4. Q EMITTER
5. Q BASE
6. Q COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25
)
Note : h
FE
Classification B: 350
1200
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
50
V
Collector-Emitter Voltage
V
CEO
20
V
Emitter-Base Voltage
V
EBO
25
V
Collector Current
I
C
300
mA
Base Current
I
B
60
mA
Collector Power Dissipation
P
C
*
0.9
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=50V, I
E
=0
-
-
0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=25V, I
C
=0
-
-
0.1
A
DC Current Gain
h
FE
V
CE
=2V, I
C
=4mA
350
-
1200
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=30mA, I
B
=3mA
-
0.042
0.3
V
Base-Emitter Voltage
V
BE
V
CE
=2V, I
C
=4mA
-
0.61
-
V
Transition Frequency
f
T
V
CE
=6V, I
C
=4mA
-
30
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
4.8
7
pF
Switching
Time
Turn-on Time
t
on
1
3
4k
5
10V
V =12V
V =-3V
1μ
s
2%
OUTPUT
DUTY CYCLE
INPUT
<
-
160
-
nS
Storage Time
t
stg
-
500
-
Fall Time
t
f
-
130
-
h Rank
Type Name
Marking
Lot No.
M
1
2
3
6
5
4
* Package mounted on a ceramic board (600
0.8
)
1
Q1
Q2
2
3
6
5
4
EQUIVALENT CIRCUIT (TOP VIEW)
EPITAXIAL PLANAR NPN TRANSISTOR
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