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參數(shù)資料
| 型號： | KTC4527 |
| 廠商： | KEC Holdings |
| 英文描述： | TRIPLE DIFFUSED NPN TRANSISTOR (HIGH VOLTAGE AND HIGH RELLABILITY HIGH SPEED SWITCHING, WIDE SOA) |
| 中文描述： | 三重擴散NPN晶體管（高電壓和高RELLABILITY高速開關(guān)，級SOA） |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 84K |
| 代理商： | KTC4527 |
2001. 4. 9
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC4527
TRIPLE DIFFUSED NPN TRANSISTOR
Revision No : 1
HIGH VOLTAGE AND HIGH RELIABILITY
HIGH SPEED SWITCHING, WIDE SOA
MAXIMUM RATING (Ta=25
)
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
MILLIMETERS
10.30 MAX
15.30 MAX
0.80
Φ
3.60 0.20
3.00
6.70 MAX
13.60 0.50
5.60 MAX
1.37 MAX
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
TO-220AB
0.50
1.50 MAX
2.54
4.70 MAX
2.60
1.50 MAX
1.50
9.50 0.20
8.00 0.20
2.90 MAX
A
R
S
E
M
M
1
2
3
F
B
G
H
L
C
K
J
O
N
P
D
Q
C
T
+
+
+
+
ELECTRICAL CHARACTERISTICS (Ta=25
)
Note : h
FE
(1) Classification R:15
30, O:20
40
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=800V, I
E
=0
-
-
10
A
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
10
A
Collector-Emitter Sustaning Voltage
V
CEX(SUS)
I
C
=1.5A, I
B1
=-I
B2
=0.3A
L=2mH, Clamped
800
-
-
V
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=1.5A, I
B
=0.3A
-
-
2
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=1.5A, I
B
=0.3A
-
-
1.5
V
DC Current Gain
h
FE
(1)(Note)
V
CE
=5V, I
C
=0.2A
15
-
40
h
FE
(2)
V
CE
=5V, I
C
=1A
8
-
-
Collector-Base Breakdown Voltage
BV
CBO
I
C
=1mA, I
E
=0
1100
-
-
V
Collector-Emitter Breakdown Voltage
BV
CEO
I
C
=5mA, R
BE
=
800
-
-
V
Emitter-Base Breakdown Voltage
BV
EBO
I
E
=1mA, I
C
=0
7
-
-
V
Collector Output Capacitance
C
ob
V
CB
=10V, f=1MHz, I
E
=0
-
60
-
pF
Transition Frequency
f
T
V
CE
=10V, I
C
=0.2A
-
15
-
MHz
Switching
Time
Turn On Time
t
on
I
B1
200
B1
I
V =400V
I
B2
I
B2
20
μ
S
I =0.4A , I =-0.8A
DUTY CYCLE
1%
OUTPUT
INPUT
<
-
-
0.5
S
Storage Time
t
stg
-
-
3
Fall Time
t
f
-
-
0.3
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
1100
V
Collector-Emitter Voltage
V
CEO
800
V
Emitter-Base Voltage
V
EBO
7
V
Collector Current
DC
I
C
3
A
Pulse
I
CP
10
Base Current
I
B
1.5
A
Collector Power Dissipation
(Tc=25
)
P
C
50
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
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