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參數(shù)資料
| 型號(hào)： | KTC4072V |
| 廠商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING) |
| 中文描述： | 外延平面NPN晶體管（開(kāi)關(guān)） |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 73K |
| 代理商： | KTC4072V |
2002. 2. 20
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC4072V
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
SWITCHING APPLICATION.
FEATURES
High Current.
Low V
CE(sat).
: V
CE(sat)
250mV at I
C
=200mA/I
B
=10mA.
Complementary to KTA2012V.
MAXIMUM RATING (Ta=25
)
DIM
A
B
C
MILLIMETERS
1.2 0.05
0.8 0.05
0.5 0.05
0.3 0.05
1.2 0.05
0.8 0.05
0.40
0.12 0.05
0.2 0.05
5
D
E
G
H
J
K
P
VSM
B
E
D
G
A
H
K
C
J
2
3
1
P
P
1. EMITTER
2. BASE
3. COLLECTOR
+
+
+
+
+
+
+
+
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
15
V
Collector-Emitter Voltage
V
CEO
12
V
Emitter-Base Voltage
V
EBO
6
V
Collector Current
I
C
500
mA
I
CP
*
1
A
Collector Power Dissipation
P
C
100
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
Type Name
Marking
L Z
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=15V, I
E
=0
-
-
100
nA
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=10
A
15
-
-
V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=1mA
12
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=10
A
6
-
-
V
DC Current Gain
h
FE
V
CE
=2V, I
C
=10mA
270
-
680
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=200mA, I
B
=10mA
-
90
250
mV
Transition Frequency
f
T
V
CE
=2V, I
C
=10mA, f
T
=100MHz
-
320
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
7.5
-
pF
* Single pulse Pw=1mS.
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