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參數(shù)資料
| 型號： | KTC3245 |
| 廠商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR NPN TRANSISTOR (HIGH VOLTAGE) |
| 中文描述： | 外延平面NPN晶體管（高壓） |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 78K |
| 代理商： | KTC3245 |
2000. 8. 23
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC3245
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
HIGH VOLTAGE APPLICATION.
FEATURES
High Breakdown Voltage.
Collector Power Dissipation : P
C
=625mW.
MAXIMUM RATING (Ta=25
)
TO-92
DIM
A
B
C
D
E
MILLIMETERS
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
0.45 MAX
1.00
F
G
H
J
K
L
M
N
D
1 2
3
B
A
J
K
G
H
F
F
L
C
E
C
M
N
1. EMITTER
2. COLLECTOR
3. BASE
+
ELECTRICAL CHARACTERISTICS (Ta=25
)
* Pulse Test : Pulse Width
300
S, Duty Cycle
2.0%
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=100
A, I
E
=0
400
-
-
V
Collector-Emitter Breakdown Voltage (1)
V
(BR)CEO
I
C
=1mA, I
B
=0
350
-
-
V
Collector-Emitter Breakdown Voltage (2)
V
(BR)CES
I
C
=100
A, I
B
=0
400
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=10
A, I
C
=0
6.0
-
-
V
Collector Cut off Current
I
CBO
V
CB
=320V, I
E
=0
-
-
100
nA
Collector Cut off Current
I
CES
V
CE
=320V, I
B
=0
-
-
500
nA
Emitter Cutoff Current
I
EBO
V
EB
=4V, I
C
=0
-
-
100
nA
DC Current Gain *
h
FE
V
CE
=10V, I
C
=1mA
40
-
-
V
CE
=10V, I
C
=10mA
50
-
200
V
CE
=10V, I
C
=50mA
45
-
-
V
CE
=10V, I
C
=100mA
40
-
-
Collector-Emitter Saturation Voltage *
V
CE(sat)
I
C
=10mA, I
B
=1mA
-
-
0.5
V
Base-Emitter Saturation Voltage *
V
BE(sat)
I
C
=10mA, I
B
=1mA
-
-
0.75
V
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
400
V
Collector-Emitter Voltage
V
CEO
350
V
Emitter-Base Voltage
V
EBO
6
V
Collector Current
I
C
300
mA
Collector Power Dissipation
P
C
625
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
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