- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374399 > KTC2025L (KEC Holdings) EPITAXIAL PLANAR NPN TRANSISTOR (LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING) PDF資料下載
參數(shù)資料
| 型號(hào)： | KTC2025L |
| 廠商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR NPN TRANSISTOR (LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING) |
| 中文描述： | 外延平面NPN晶體管（低頻功率放大器，中速開關(guān)） |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 399K |
| 代理商： | KTC2025L |
2003. 3. 27
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTC2025D/L
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 3
LOW FREQUENCY POWER AMP,
MEDIUM SPEED SWITCHING APPLICATIONS
FEATURES
High breakdown voltage V
CEO
120V, high current 1A.
Low saturation voltage and good linearity of h
FE
.
Complementary to KTA1045D/L
MAXIMUM RATING (Ta=25
)
DPAK
DIM
A
B
C
D
E
MILLIMETERS
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
2.70 0.2
2.30 0.1
1.00 MAX
2.30 0.2
0.5 0.1
2.00 0.20
0.50 0.10
0.91 0.10
0.90 0.1
1.00 0.10
0.95 MAX
F
H
I
J
K
L
M
O
P
Q
A
C
D
B
E
K
I
J
Q
H
F
F
M
O
P
L
1
2
3
1. BASE
2. COLLECTOR
3. EMITTER
+
+
+
+
+
+
+
+
+
+
+
+
+
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
Collector Cut of Current
Emitter Cut of Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
)
(Note) : h
FE
(1) Classification Y:100
200, GR:160
320
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
120
V
Collector-Emitter Voltage
V
CEO
120
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
1
A
I
CP
2
Collector Power
Dissipation
Ta=25
P
C
1.0
W
Tc=25
8
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
SYMBOL
I
CBO
I
EBO
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
h
FE
(1) Note
h
FE
(2)
f
T
C
ob
V
CE(sat)
V
BE(sat)
TEST CONDITION
V
CB
=50V, I
E
=0
V
EB
=4V, I
C
=0
I
C
=10 A, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10 A, I
C
=0
V
CE
=5V, I
C
=50mA
V
CE
=5V, I
C
=500mA
V
CE
=10V, I
C
=50mA
V
CB
=10V, I
E
=0, f=1MHz
I
C
=500mA, I
B
=50mA
I
C
=500mA, I
B
=50mA
MIN.
-
-
120
120
5
100
20
-
-
-
-
TYP.
-
-
-
-
-
-
-
130
20
0.15
0.85
MAX.
1
1
-
-
-
320
-
-
-
0.4
1.2
UNIT
A
A
V
V
V
DC Current Gain
Gain Bandwidth Product
Output Capacitance
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
MHz
pF
V
V
Switching Time
Turn-on Time
t
on
-
100
-
nS
Turn-off Time
t
off
-
500
-
Storage Time
t
stg
-
700
-
I
B2
B1
I
20u sec
1uF
1uF
24
1
1
100
I =10I =-10I =500mA
C
V =12V
-2V
12V
DIM
A
B
C
D
E
F
G
H
I
J
K
MILLIMETERS
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
9.50 0.6
2.30 0.1
0.76 0.1
1.0 MAX
2.30 0.2
0.5 0.1
2.0 0.2
+
+
+
IPAK
D
B
Q
E
H
F
F
C
A
P
L
I
J
1
2
3
L
P
Q
0.50 0.1
1.0 0.1
0.90 MAX
G
1. BASE
2. COLLECTOR
3. EMITTER
K
+
+
+
+
+
+
+
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KTC2026 | EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE) |
| KTC2028 | EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE) |
| KTC2078 | TRIPLE DIFFUSED PNP TRANSISTOR(CB TRANSCEIVER TX FINAL, AMPLIFIER, HF TRANSISTOR) |
| KTC2120 | SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE (PCT PROCESS) |
| KTC2235 | SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE (PCT PROCESS) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KTC2026 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| KTC2028 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE) |
| KTC2073 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:2SC3229 |
| KTC2078 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:TRIPLE DIFFUSED PNP TRANSISTOR(CB TRANSCEIVER TX FINAL, AMPLIFIER, HF TRANSISTOR) |
| KTC2120 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE (PCT PROCESS) |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。