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參數(shù)資料
| 型號： | KTB2234 |
| 廠商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR PNP TRANSISTOR (MICRO MOTOR DRIVE, HAMMER DRIVE, POWER SWITCHING, POWER AMPLIFIER) |
| 中文描述： | 外延平面PNP晶體管（微型電機驅(qū)動，錘子驅(qū)動器，電源開關，功率放大器） |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 88K |
| 代理商： | KTB2234 |
2001. 10. 23
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTB2234
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 0
MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS.
POWER SWITCHING APPLICATIONS.
POWER AMPLIFIER APPLICATION.
FEATURES
High DC Current Gain
: h
FE
=200(Min.) (V
CE
=-2V, I
C
=-1A)
Low Saturation Voltage
: V
CE(sat)
=-1.5V(Max.) (I
C
=-1A, I
B
=-1mA)
Complementary to KTD2854.
MAXIMUM RATINGS (Ta=25
)
DIM
A
B
C
MILLIMETERS
7.20 MAX
5.20 MAX
0.60 MAX
D
E
F
G
H
J
K
L
M
N
1. EMITTER
2. COLLECTOR
3. BASE
P
Q
R
S
TO-92L
2.50 MAX
1.15 MAX
1.27
1.70 MAX
0.55 MAX
14.00 0.50
0.35 MIN
0.75 0.10
4
25
1.25
Φ
1.50
0.10 MAX
12.50 0.50
1.00
O
DEPTH:0.2
1
2
3
B
A
C
Q
K
F
F
M
M
N
N
O
H
L
J
D
G
P
H
H
E
D
H
R
S
+
+
+
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-100
V
Collector-Emitter Voltage
V
CEO
-100
V
Emitter-Base Voltage
V
EBO
-8
V
Collector Current
DC
I
C
-2
A
Peak
I
CP
-3
Base Current
I
B
-0.5
A
Collector Power Dissipation
P
C
1
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-80V, I
E
=0
-
-
-10
A
Emitter Cut-off Current
I
EBO
V
EB
=-8V, I
C
=0
-
-
-4
mA
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-10mA, I
B
=0
-100
-
-
V
DC Current Gain
h
FE
V
CE
=-2V, I
C
=-1A(Pulse)
2000
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-1A, I
B
=-1mA(Pulse)
-
-
-1.5
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=-1A, I
B
=-1mA(Pulse)
-
-
-2.0
V
Transition Frequency
f
T
V
CE
=-2V, I
C
=-0.5A
-
50
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
27
-
pF
Switching
Time
Turn On Time
t
on
I
B1
3
B1
I
V =-30V
I
B2
I
B2
20
μ
s
-I =I =1mA
DUTY CYCLE
1%
OUTPUT
INPUT
0
<
-
0.4
-
S
Storage Time
t
stg
-
2.0
-
Fall Time
t
f
-
0.4
-
COLLECTOR
BASE
EMITTER
4k
800
EQUIVALENT CIRCUIT
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|---|---|
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相關代理商/技術參數(shù) |
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|---|---|
| KTB2510 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR (HIGH POWER AMPLIFIER DARLINGTON) |
| KTB2510_08 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR |
| KTB2530 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR |
| KTB2955 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR (HIGH POWER AMPLIFIER) |
| KTB595 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:TRIPLE DIFFUSED PNP TRANSISTOR(GENERAL PURPOSE) |
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