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參數(shù)資料
| 型號： | KTA2012V |
| 廠商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING) |
| 中文描述： | 外延平面PNP晶體管（開關） |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 72K |
| 代理商： | KTA2012V |
2002. 2. 20
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTA2012E
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
SWITCHING APPLICATION.
FEATURES
A Collector Current is Large.
Collector Saturation Voltage is low.
: V
CE(sat)
-250mV at I
C
=-200mA/I
B
=-10mA.
Complementary to KTC4072E.
MAXIMUM RATING (Ta=25
)
DIM
A
B
MILLIMETERS
1.60 0.10
0.85+
D
E
G
H
J
ESM
0.70+
0.27+0.10/-0.05
1.60+
1.00 0.10
0.50
0.13 0.05
+
C
1
3
2
E
B
D
A
G
H
C
J
1. EMITTER
2. BASE
3. COLLECTOR
+
+
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-15
V
Collector-Emitter Voltage
V
CEO
-12
V
Emitter-Base Voltage
V
EBO
-6
V
Collector Current
I
C
-500
mA
I
CP
*
-1
A
Collector Power Dissipation
P
C
100
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
Type Name
Marking
S Z
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-15V, I
E
=0
-
-
-100
nA
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=-10
A
-15
-
-
V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-1mA
-12
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=-10
A
-6
-
-
V
DC Current Gain
h
FE
V
CE
=-2V, I
C
=-10mA
270
-
680
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-200mA, I
B
=-10mA
-
-100
-250
mV
Transition Frequency
f
T
V
CE
=-2V, I
C
=-10mA, f
T
=100MHz
-
260
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
6.5
-
pF
* Single pulse Pw=1mS.
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相關代理商/技術參數(shù) |
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|---|---|
| KTA2013F | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR |
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| KTA2014F | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR |
| KTA2014-GR | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:PNP Plastic-Encapsulate Transistors |
| KTA2014-O | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:PNP Plastic-Encapsulate Transistors |
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