參數(shù)資料
型號： KTA1862L
廠商： KEC Holdings
英文描述： EPITAXIAL PLANAR PNP TRANSISTOR (HIGH VOLTAGE SWITCHING POWER SUPPLY SWITCHING FOR TELEPHONES)
中文描述： 外延平面PNP晶體管（高壓開關(guān)電源開關(guān)電話）
文件頁數(shù)： 1/3頁
文件大小： 409K
代理商： KTA1862L
2003. 3. 27
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTA1862D/L
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 4
HIGH VOLTAGE SWITCHING.
POWER SUPPLY SWITCHING FOR TELEPHONES.
FEATURES
High Breakdown Voltage, Typically : BV
CEO
=-400V.
Low Collector Saturation Voltage.
: V
CE(sat)
=-0.5V(Max.) at (I
C
=0.5A)
High Switching Speed, Typically
: t
f
=
0.4 S at I
C
=-1A
Wide Safe Operating Area (SOA)
MAXIMUM RATING (Ta=25
)
DPAK
DIM
A
B
C
D
E
MILLIMETERS
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
2.70 0.2
2.30 0.1
1.00 MAX
2.30 0.2
0.5 0.1
2.00 0.20
0.50 0.10
0.91 0.10
0.90 0.1
1.00 0.10
0.95 MAX
F
H
I
J
K
L
M
O
P
Q
A
C
D
B
E
K
I
J
Q
H
F
F
M
O
P
L
1
2
3
1. BASE
2. COLLECTOR
3. EMITTER
+
+
+
+
+
+
+
+
+
+
+
+
+
ELECTRICAL CHARACTERISTICS (Ta=25
)
Note : h
FE
(1) Classification O:56~120, Y:82~180.
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-400
V
Collector-Emitter Voltage
V
CEO
-400
V
Emitter-Base Voltag
V
EBO
-7
V
Collector Current
DC
I
C
-2.0
A
Pulse
I
CP
-4.0
Collector Power
Dissipation
Ta=25
P
C
1.0
W
Tc=25
10
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
CHARACTERISTIC
Collector Cut of Current
Emitter Cut of Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
SYMBOL
I
CBO
I
EBO
BV
CBO
BV
CEO
BV
EBO
h
FE
(1) Note
h
FE
(2)
V
CE(sat)
V
BE(sat)
f
T
C
ob
TEST CONDITION
V
CB
=-400V
V
EB
=-5V
I
C
=-50 A
I
C
=-1mA
I
E
=-50 A
V
CE
=-5V, I
C
=-100mA
V
CE
=-5V, I
C
=-500mA
I
C
=-500mA, I
B
=-100mA
I
C
=-500mA, I
B
=-100mA
V
CE
=-10V, I
E
=-100mA, f=5MHz
V
CB
=-10V, I
E
=0mA, f=1MHz
MIN.
-
-
-400
-400
-7
56
6
-
-
-
-
TYP.
-
-
-
-
-
100
-
-0.3
-
18
30
MAX.
-1.0
-1.0
-
-
-
180
-
-0.5
-1.2
-
-
UNIT
A
A
V
V
V
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
V
V
MHz
pF
Switching Time
Turn-on Time
t
on
I
B1
1
B1
I
V =-150V
I
B2
I
B2
20
μ
sec
-I =I =0.2A
DUTY CYCLE
1%
OUTPUT
INPUT
0
<
-
0.2
-
S
Turn-off Time
t
stg
-
-1.8
-
Storage Time
t
f
-
0.4
-
DIM
A
B
C
D
E
F
G
H
I
J
K
MILLIMETERS
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
9.50 0.6
2.30 0.1
0.76 0.1
1.0 MAX
2.30 0.2
0.5 0.1
2.0 0.2
+
IPAK
D
B
Q
E
H
F
F
C
A
P
L
I
J
1
2
3
L
P
Q
0.50 0.1
1.0 0.1
0.90 MAX
G
1. BASE
2. COLLECTOR
3. EMITTER
K
+
+
+
+
相關(guān)PDF資料
PDF描述
KTA1940 TRIPLE DIFFUSED PNP TRANSISTOR(HIGH POWER AMPLIFIER)
KTA1943 TRIPLE DIFFUSED PNP TRANSISTOR
KTA1962 TRIPLE DIFFUSED PNP TRANSISTOR(POWER AMPLIFIER)
KTA200 EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)
KTA511T EPITAXIAL PLANAR PNP TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KTA1940 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:TRIPLE DIFFUSED PNP TRANSISTOR(HIGH POWER AMPLIFIER)
KTA1943 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:TRIPLE DIFFUSED PNP TRANSISTOR
KTA1962 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:TRIPLE DIFFUSED PNP TRANSISTOR(POWER AMPLIFIER)
KTA200 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)
KTA2012 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING)
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