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參數(shù)資料
| 型號(hào)： | KTA1807L |
| 廠商： | KEC Holdings |
| 英文描述： | TRIPLE DIFFUSED PNP TRANSISTOR(HIGH VOLTAGE SWITCHING POWER SUPPLY SWITCHING FOR TELEPHONES) |
| 中文描述： | 三重?cái)U(kuò)散PNP晶體管（高壓開(kāi)關(guān)電源開(kāi)關(guān)電話） |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 404K |
| 代理商： | KTA1807L |
2003. 3. 27
1/4
SEMICONDUCTOR
TECHNICAL DATA
KTA1807D/L
TRIPLE DIFFUSED PNP TRANSISTOR
Revision No : 2
HIGH VOLTAGE SWITCHING.
POWER SUPPLY SWITCHING FOR TELEPHONES.
FEATURES
High Voltage : V
CEO
=-600V.
High Speed Switching Time.
: t
f
1.0 s (I
C
=-0.5A)
Low Collector Emitter Saturation Voltage.
: V
CE(sat)
=-0.28V (I
C
=-0.3A, I
B
=-60mA)
Wide Safe Operating Area (SOA).
MAXIMUM RATING (Ta=25
)
DPAK
DIM
MILLIMETERS
+
+
+
+
+
+
A
B
C
D
F
H
I
J
K
L
M
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
2.70 0.2
2.30 0.1
1.00 MAX
+
+
+
+
+
+
+
2.30 0.2
0.5 0.1
2.00 0.20
0.50 0.10
0.91 0.10
E
0.90 0.1
O
A
C
D
B
E
K
I
J
Q
H
F
F
M
O
P
L
1
2
3
1. BASE
2. COLLECTOR
3. EMITTER
1.00 0.10
0.95 MAX
P
Q
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-600
V
Collector-Emitter Voltage
V
CEO
-600
V
Emitter-Base Voltag
V
EBO
-7
V
Collector Current
DC
I
C
-1.0
A
Pulse *
I
CP
-2.0
Collector Power Dissipation
P
C
1.0
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
DIM
A
B
MILLIMETERS
6.60 0.2
6.10 0.2
+
+
+
IPAK
D
B
Q
E
H
F
F
C
A
P
L
I
J
1
2
3
C
D
E
F
G
H
I
J
L
P
Q
5.0 0.2
1.10 0.2
9.50 0.6
2.30 0.1
0.76 0.1
1.0 MAX
+
+
+
2.30 0.2
0.5 0.1
0.50 0.1
1.0 0.1
0.90 MAX
G
1. BASE
2. COLLECTOR
3. EMITTER
K
2.0 0.2
K
+
* PW
10ms, Duty Cycle
50%.
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