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參數資料
| 型號： | KTA1242 |
| 廠商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR PNP TRANSISTOR (STROBO FLASH, HIGH CURRENT) |
| 中文描述： | 外延平面PNP晶體管（閃光燈閃光，高電流） |
| 文件頁數： | 1/2頁 |
| 文件大小： | 395K |
| 代理商： | KTA1242 |
2003. 3. 27
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTA1242D/L
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 4
STROBO FLASH APPLICATION.
HIGH CURRENT APPLICATION.
FEATURES
h
FE
=100
Low Collector Saturation Voltage.
: V
CE(sat)
=-0.5V (I
C
=-3A, I
B
=-75mA).
320 (V
CE
=-2V, I
C
=-0.5A).
MAXIMUM RATING (Ta=25
)
DPAK
DIM
A
B
C
D
MILLIMETERS
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
+
+
+
F
H
I
J
K
L
M
O
2.70 0.2
2.30 0.1
1.00 MAX
+
+
+
+
+
+
+
2.30 0.2
0.5 0.1
2.00 0.20
0.50 0.10
0.91 0.10
0.90 0.1
E
A
C
D
B
E
K
I
J
Q
H
F
F
M
O
P
L
1
2
3
1. BASE
2. COLLECTOR
3. EMITTER
1.00 0.10
0.95 MAX
P
Q
+
+
+
ELECTRICAL CHARACTERISTICS (Ta=25
)
DIM
A
B
C
D
E
F
G
H
I
J
K
MILLIMETERS
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
9.50 0.6
2.30 0.1
0.76 0.1
1.0 MAX
2.30 0.2
0.5 0.1
2.0 0.2
+
+
IPAK
D
B
Q
E
H
F
F
C
A
P
L
I
J
1
2
3
L
P
Q
0.50 0.1
1.0 0.1
0.90 MAX
G
1. BASE
2. COLLECTOR
3. EMITTER
K
+
+
+
+
+
Note : h
FE
(1) Classification O:100~200, Y:160~320
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-35
V
Collector-Emitter Voltage
V
CEO
-20
V
Emitter-Base Voltag
V
EBO
-8
V
Collector Current
I
C
-5
A
Base Current
I
B
-0.5
A
Collector Power Dissipation
P
C
1.0
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-35V, I
E
=0
-
-
-100
nA
Emitter Cut-off Current
I
EBO
V
EB
=-8V, I
C
=0
-
-
-100
nA
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-10mA, I
B
=0
-20
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=-1mA, I
C
=0
-8
-
-
V
DC Current Gain
h
FE
(1) (Note)
V
CE
=-2V, I
C
=-0.5A
100
-
320
h
FE
(2)
V
CE
=-2V, I
C
=-4A
70
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-3A, I
B
=-75mA
-
-
-0.5
V
Base-Emitter Voltage
V
BE
V
CE
=-2V, I
C
=-4A
-
-
-1.5
V
Transition Frequency
f
T
V
CE
=-2V, I
C
=-0.5A
-
170
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
62
-
pF
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|---|---|
| KTA1242D | EPITAXIAL PLANAR PNP TRANSISTOR (STROBO FLASH, HIGH CURRENT) |
| KTA1242L | EPITAXIAL PLANAR PNP TRANSISTOR (STROBO FLASH, HIGH CURRENT) |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| KTA1242D | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR (STROBO FLASH, HIGH CURRENT) |
| KTA1242L | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR (STROBO FLASH, HIGH CURRENT) |
| KTA1243 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR (CAMERA STROBO FLASH, HIGH CURRENT) |
| KTA1266 | 制造商:TGS 制造商全稱:Tiger Electronic Co.,Ltd 功能描述:TO-92 Plastic-Encapsulate Transistors (PNP) |
| KTA1266_02 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR |
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