參數(shù)資料
型號： KSC3569
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： High Speed Switching Application
中文描述： 2 A, 400 V, NPN, Si, POWER TRANSISTOR
封裝： TO-220F, 3 PIN
文件頁數(shù)： 2/5頁
文件大?。?/td> 57K
代理商： KSC3569
2000 Fairchild Semiconductor International
K
Rev. A, February 2000
Typical Characteristics
Figure 1. Static Characteristic
Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Switching Time
Figure 5. Safe Operating Area
Figure 6. Reverse Bias Safe Operating Area
0
1
2
3
4
5
0.0
0.2
0.4
0.6
0.8
1.0
I
B
= 100mA
I
B
= 90mA
I
B
= 70mA
I
B
= 60mA
I
B
= 80mA
I
B
= 50mA
I
B
= 40mA
I
B
= 30mA
I
B
= 20mA
I
B
= 10mA
I
C
[
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
1
10
100
1000
1
10
100
1000
V
CE
= 5V
h
F
,
I
C
[A], COLLECTOR CURRENT
1
10
100
1000
0.01
0.1
1
10
I
C
= 5 I
B
V
CE
(sat)
V
BE
(sat)
V
B
(
C
(
I
C
[mA], COLLECTOR CURRENT
10
100
1000
0.01
0.1
1
10
I
C
= 5 I
B1
= -5 I
B2
t
F
t
ON
t
STG
t
O
,
S
,
F
μ
s
I
C
[mA], COLLECTOR CURRENT
1
10
100
1000
10
100
1000
10000
10
μ
s
1ms
100
μ
s
DsspaionLmted
1m
SbLmted
I
C
[
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0
100
200
300
400
500
0.0
0.2
0.4
0.6
0.8
1.0
V
C
(
V
C
(
I
C
[
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
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參數(shù)描述
KSC3569YTU 功能描述:兩極晶體管 - BJT NPN Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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