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參數(shù)資料
| 型號： | KSC3503DSTU |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | CRT Display, Video Output |
| 中文描述： | 0.1 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 封裝： | TO-126, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 56K |
| 代理商： | KSC3503DSTU |
2000 Fairchild Semiconductor International
Rev. A, February 2000
K
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C
unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current (DC)
I
CP
Collector Current (Pulse)
P
C
Collector Dissipation (T
C
=25
°
C)
P
C
Collector Dissipation (T
A
=25
°
C)
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
BV
CBO
Collector-Base Breakdown Voltage
BV
CEO
Collecto- Emitter Breakdown Voltage
BV
EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
h
FE
DC Current Gain
V
CE
(sat)
Collector-Emitter Saturation Voltage
V
BE
(sat)
Base-Emitter Saturation Voltage
f
T
Current Gain Bandwidth Product
C
ob
Output Capacitance
C
re
Reverse Transfer Capacitance
h
FE
Classification
Classification
h
FE
Parameter
Value
300
300
5
100
200
7
1.2
150
- 55 ~ 150
Units
V
V
V
mA
mA
W
W
°
C
°
C
Test Condition
I
C
= 10
μ
A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CB
= 200V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 10V, I
C
= 10mA
I
C
= 20mA, I
B
= 2mA
I
C
= 20mA, I
B
= 2mA
V
CE
= 30V, I
C
= 10mA
V
CB
= 30V, f = 1MHz
V
CB
= 30V, f = 1MHz
Min.
300
300
5
Typ.
Max.
Units
V
V
V
μ
A
μ
A
0.1
0.1
320
0.6
1
40
V
V
150
2.6
1.8
MHz
pF
pF
C
D
E
F
40 ~ 80
60 ~ 120
100 ~ 200
160 ~ 320
KSC3503
CRT Display, Video Output
High Voltage : V
CEO
=300V
Low Reverse Transfer Capacitance : C
re
=1.8pF @ V
CB
=30V
1
1. Emitter 2.Collector 3.Base
TO-126
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相關代理商/技術參數(shù) |
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|---|---|
| KSC3503ESTU | 功能描述:兩極晶體管 - BJT NPN Epitaxial Silicon Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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