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參數(shù)資料
| 型號： | KS32C6200 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 16/32-Bit RISC Microcontroller(16/32-位 RISC微控制器) |
| 中文描述： | 16/32位RISC微控制器（16/32位的RISC微控制器） |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 34K |
| 代理商： | KS32C6200 |
TECHNICAL SUMMARY KS32C6200 MICROPROCESSOR
2
1. OVERVIEW
SAMSUNG’ s KS32C6200 16/32-bit RISC micro-
controller is designed to provide a cost-effective and
high performance micro controller solution for
general applications. To reduce total system cost,
KS32C6200 also provides 2-ch UART, 2-ch DMA,
System Manager (Chip select logic, DRAM
controller), 3-ch Timer, Parallel port, I/O ports.
An outstanding feature of the KS32C6200 is its CPU
core, a 16/32-bit RISC processor (ARM7TDMI)
designed by Advanced RISC Machines, Ltd. The
ARM7TDMI core is a low-power, general purpose,
microprocessor macro-cell that was developed for
use in application-specific and custom-specific
integrated circuits. Its simple, elegant, and fully static
design is particularly suitable for cost-sensitive and
power sensitive applications.
The KS32C6200 was developed using ARM7TDMI
core, 0.5um CMOS standard cells, and memory
compiler. Most of the on-chip function blocks were
designed using an HDL synthesizer. The
KS32C6200 has been fully verified in SAMSUNG s
MCU test environment.
The integrated on-chip functions are as follows:
Static ARM7TDMI CPU Core
2K byte Instruction/Data cache
System Manager
(DRAM Control, Chip Select logic )
2-ch DMA
Parallel Ports (Support IEEE1284)
2-ch UART
3-ch Timer
Interrupt Controller
Tone Generator
I/O ports
Watch Dog Timer
Derasterizer
208bit Shifter/Rotater
On-Chip Debugging Support using JTAG
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| KS3302BU | 功能描述:兩極晶體管 - BJT Transistor Small Signal RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KS3302TA | 功能描述:兩極晶體管 - BJT Transistor Small Signal RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KS33J4 | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:40 W Transient Voltage Suppressor Diode |
| KS33K5 | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:40 W Transient Voltage Suppressor Diode |
| KS34A | 制造商:Baumer Electric Ag 功能描述: |
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