參數(shù)資料
型號: KRC235S
廠商: KEC Holdings
英文描述: EPITAXIAL PLANAR NPN TRANSISTOR
中文描述: 外延平面NPN晶體管
文件頁數(shù): 2/4頁
文件大小: 430K
代理商: KRC235S
2002. 5. 14
2/3
KRC231S~KRC235S
Revision No : 3
ELECTRICAL CHARACTERISTICS (Ta=25
)
Note : * Characteristic of Transistor Only.
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector-Emitter Breakdown Voltage
BV
CEO
BV
CBO
BV
EBO
I
CBO
V
CE(sat)
h
FE
I
C
=1mA
15
-
-
V
Collector-Base Breakdown Voltage
I
C
=50 A
I
E
=50 A
V
CB
=30V
I
C
=50mA, I
B
=2.5mA
V
CE
=5V, I
C
=50mA
30
-
-
V
Emitter-Base Breakdown Voltage
5.0
-
-
V
Collector Cut-off Current
-
-
0.5
A
Collector-Emitter Saturation Voltage
-
40
80
mV
DC Current Gain
200
350
800
-
Input Resistor
KRC231S
R
1
-
2.2
-
k
KRC232S
-
5.6
-
KRC233S
-
10
-
KRC234S
-
4.7
-
KRC235S
-
6.8
-
Transition Frequency
f
T
*
V
CE
=10V, I
E
=-50mA,
f=100MHz
f=1kHz, I
B
=1mA, V
IN
=0.3V
-
200
-
MHz
On Resistance
Ron
-
0.6
-
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