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參數(shù)資料
| 型號： | KP022J |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | 250mW GaAs Power FET (Pb-Free Type) |
| 中文描述： | 25萬千瓦GaAs功率場效應(yīng)管（無鉛型） |
| 文件頁數(shù)： | 7/13頁 |
| 文件大小： | 599K |
| 代理商： | KP022J |
Application Circuit: 2110-2170MHz
Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
Web Site:
www.sei.co.jp/GaAsIC/
-7-
Technical Note
P0120002P
250mW GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
D.
C1
C6
R1
L1
C2
R2
L3
C3
C4
L4
C5
L2
RF in (Rs=50
)
RF out (RL=50
)
Vg
Vd
U.T
Z1
Z2
Z4
Z5
Z7
C7
Z3
Z6
B
r
e
r
S
RF in
RF out
L2
L1
L3
L4
R1
R2
C1
C2
C3
C4
C5
C6
Vg
(-0.7
～
-2V)
(+6V)
KP022J
C7
Vd
Ref. Des.
R1
R2
C1
C2
C3
C4
C5
C6
C7
L1
L2
L3
L4
Value
82
470
0.5pF
0.75pF
0.1μF
0.5pF
2200pF
0.1μF
0.75pF
3.3nH
3.3nH
18nH
18nH
Part Number
SUSUMU
RR0816 series
MURATA
GRM18 series
TOKO LL1608
series
1.9
2
2.1
2.2
2.3
Frequency (GHz)
-30
-20
-10
0
10
20
S11
S12
S22
S21
Ref.
Designator
Z1
Z2
Z3
Z4
Z5
Z6
Z7
All microstrip lines have a line impedance of 50
.
Electrical length
@ 2.1GHz (deg)
6.8
11.34
4.08
13.61
8.62
6.38
38.56
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KP023J | 800mW GaAs Power FET (Pb-Free Type) |
| KP024J | 1.5W GaAs Power FET (Pb-Free Type) |
| KP027J | 250mW GaAs Power FET (Pb-Free Type) |
| KP028J | 1W GaAs Power FET (Pb-Free Type) |
| KP029J | 2W GaAs Power FET (Pb-Free Type) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KP023J | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:800mW GaAs Power FET (Pb-Free Type) |
| KP024J | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:1.5W GaAs Power FET (Pb-Free Type) |
| KP027J | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:250mW GaAs Power FET (Pb-Free Type) |
| KP028J | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:1W GaAs Power FET (Pb-Free Type) |
| KP029J | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:2W GaAs Power FET (Pb-Free Type) |
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