參數資料
型號: KMPC8541PXAQF
廠商: Freescale Semiconductor
文件頁數: 66/88頁
文件大小: 0K
描述: IC MPU POWERQUICC III 783-FCPBGA
標準包裝: 2
系列: MPC85xx
處理器類型: 32-位 MPC85xx PowerQUICC III
速度: 1.0GHz
電壓: 1.3V
安裝類型: 表面貼裝
封裝/外殼: 783-BBGA,FCBGA
供應商設備封裝: 783-FCPBGA(29x29)
包裝: 托盤
MPC8541E PowerQUICC III Integrated Communications Processor Hardware Specification, Rev. 4.2
Freescale Semiconductor
69
Thermal
Ultimately, the final selection of an appropriate heat sink depends on many factors, such as thermal
performance at a given air velocity, spatial volume, mass, attachment method, assembly, and cost. Several
heat sinks offered by Aavid Thermalloy, Alpha Novatech, IERC, Chip Coolers, Millennium Electronics,
and Wakefield Engineering offer different heat sink-to-ambient thermal resistances, that allows the
MPC8541E to function in various environments.
16.2.1
Recommended Thermal Model
For system thermal modeling, the MPC8541E thermal model is shown in Figure 44. Five cuboids are used
to represent this device. To simplify the model, the solder balls and substrate are modeled as a single block
29x29x1.6 mm with the conductivity adjusted accordingly. The die is modeled as 8.7 x 9.3 mm at a
thickness of 0.75 mm. The bump/underfill layer is modeled as a collapsed resistance between the die and
substrate assuming a conductivity of 4.4 W/mK in the thickness dimension of 0.07 mm. The lid attach
adhesive is also modeled as a collapsed resistance with dimensions of 8.7 x 9.3 x 0.05 mm and the
conductivity of 1.07 W/mK. The nickel plated copper lid is modeled as 11 x 11 x 1 mm.
Figure 43. MPC8541E Thermal Model
Die
Lid
Substrate and solder balls
Heat Source
Substrate
Side View of Model (Not to Scale)
Top View of Model (Not to Scale)
x
y
z
Conductivity
Value
Unit
Lid
(11
× 11 × 1 mm)
kx
360
W/(m
× K)
ky
360
kz
360
Lid Adhesive—Collapsed resistance
(8.7
× 9.3 × 0.05 mm)
kz
1.07
Die
(8.7
× 9.3 × 0.75 mm)
Bump/Underfill—Collapsed resistance
(8.7
× 9.3 × 0.07 mm)
kz
4.4
Substrate and Solder Balls
(25
× 25 × 1.6 mm)
kx
14.2
ky
14.2
kz
1.2
Adhesive
Bump/underfill
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