參數(shù)資料
型號: KMPC8358EVVAGDGA
廠商: Freescale Semiconductor
文件頁數(shù): 94/102頁
文件大小: 0K
描述: IC MPU POWERQUICC II PRO 740TBGA
標準包裝: 2
系列: MPC83xx
處理器類型: 32-位 MPC83xx PowerQUICC II Pro
速度: 400MHz
電壓: 1.2V
安裝類型: 表面貼裝
封裝/外殼: 740-LBGA
供應商設備封裝: 740-TBGA(37.5x37.5)
包裝: 托盤
MPC8360E/MPC8358E PowerQUICC II Pro Processor Revision 2.x TBGA Silicon Hardware Specifications, Rev. 5
Freescale Semiconductor
91
Thermal Characteristics
Example 1. Sample Table Use
Example A. To configure the device with CSB clock rate of 266 MHz, core rate of 400 MHz, and QUICC Engine
clock rate 300 MHz while the input clock rate is 33 MHz. Conf No. ‘s10’ and ‘c1’ are selected from Table 76. SPMF
is 1000, CORPLL is 0000011, CEPMF is 01001, and CEPDF is 0.
Example B. To configure the device with CSBCSB clock rate of 266 MHz, core rate of 533 MHz and QUICC Engine
clock rate 400 MHz while the input clock rate is 66 MHz. Conf No. ‘s5h’ and ‘c2h’ are selected from Table 76. SPMF
is 0100, CORPLL is 0000100, CEPMF is 00110, and CEPDF is 0.
22
Thermal
This section describes the thermal specifications of the MPC8360E/58E.
22.1
Thermal Characteristics
This table provides the package thermal characteristics for the 37.5 mm × 37.5 mm 740-TBGA package.
Index
SPMF
CORE
PLL
CEPMF CEPDF
Input Clock
(MHz)
CSB Freq
(MHz)
Core Freq
(MHz)
QUICC
Engine Freq
(MHz)
400
(MHz)
533
(MHz)
667
(MHz)
A
1000
0000011
01001
0
33
266
400
300
∞∞
B
0100
0000100
00110
0
66
266
533
400
∞∞
Table 77. Package Thermal Characteristics for the TBGA Package
Characteristic
Symbol
Value
Unit
Notes
Junction-to-ambient natural convection on single-layer board (1s)
RθJA
15
° C/W
Junction-to-ambient natural convection on four-layer board (2s2p)
RθJA
11
° C/W
Junction-to-ambient (@1 m/s) on single-layer board (1s)
RθJMA
10
° C/W
Junction-to-ambient (@ 1 m/s) on four-layer board (2s2p)
RθJMA
8
° C/W
Junction-to-ambient (@ 2 m/s) on single-layer board (1s)
RθJMA
9
° C/W
Junction-to-ambient (@ 2 m/s) on four-layer board (2s2p)
RθJMA
7
° C/W
Junction-to-board thermal
RθJB
4.5
° C/W
Junction-to-case thermal
RθJC
1.1
° C/W
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