參數(shù)資料
型號(hào)： KMM378S3227BT
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 32Mx72 SDRAM DIMM(32M x 72 動(dòng)態(tài) RAM模塊)
中文描述： 32Mx72 SDRAM的內(nèi)存（32M × 72配置動(dòng)態(tài)內(nèi)存模塊）
文件頁數(shù)： 5/11頁
文件大小： 183K
代理商： KMM378S3227BT
SDRAM MODULE
KMM378S3227BT
REV. 0 April. '98
Preliminary
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
V
IN
, V
OUT
-1.0 ~ 4.6
V
Voltage on V
DD
supply relative to Vss
V
DD
, V
DDQ
-1.0 ~ 4.6
V
Storage temperature
T
STG
-55 ~ +150
°
C
Power dissipation
P
D
18
W
Short circuit current
I
OS
50
mA
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Note :
DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= 0 to 70
°
C)
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply voltage
V
DD
3.0
3.3
3.6
V
Input high votlage
V
IH
2.0
3.0
V
DDQ
+0.3
V
1
Input low voltage
V
IL
-0.3
0
0.8
V
2
Output high voltage
V
OH
2.4
-
-
V
I
OH
= -2mA
Output low voltage
V
OL
-
-
0.4
V
I
OL
= 2mA
Input leakage current(Inputs)
I
IL
-2
-
2
uA
3
Input leakage current (I/O pins)
I
IL
-1.5
-
1.5
uA
3,4
CAPACITANCE
(V
DD
= 3.3V, T
A
= 23
°
C, f = 1MHz, V
REF
=1.4V
±
200
mV)
Parameter
Symbol
Min
Max
Unit
Input capacitance (A
0
~ A
11
, CS0)
Input capacitance (RAS, CAS, WE, CKE0)
Input capacitance (CLK0)
Input capacitance (BA0, BA1)
Input capacitance (DQM)
Data input/output capacitance (DQ
0
~ DQ
71
)
C
IN1
C
IN2
C
IN3
C
IN4
C
IN5
C
OUT
-
-
-
-
-
-
22
22
14
22
22
16.5
pF
pF
pF
pF
pF
pF
1. V
IH
(max) = 5.6V AC. The overshoot voltage duration is
≤
3ns.
2. V
IL
(min) = -2.0V AC. The undershoot voltage duration is
≤
3ns.
3. Any input 0V
≤
V
IN
≤
V
DDQ.
Input leakage currents include HI-Z output leakage for all bi-directional buffers with Tri-State outputs.
4. Dout is disabled, 0V
≤
V
OUT
≤
V
DDQ.
Note :
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