參數(shù)資料
型號(hào)： KMM375S3227BT
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 32Mx72 SDRAM DIMM(32M x 72 動(dòng)態(tài) RAM模塊)
中文描述： 32Mx72 SDRAM的內(nèi)存（32M × 72配置動(dòng)態(tài)內(nèi)存模塊）
文件頁(yè)數(shù)： 6/11頁(yè)
文件大?。?/td> 202K
代理商： KMM375S3227BT
REV. 2 April. '98
Preliminary
KMM375S3227BT
SDRAM MODULE
DC CHARACTERISTICS
(Recommended Operating Condition Unless Otherwise Noted, T
A
= 0 to 70
°
C)
Parameter
Symbol
Test Condition
CAS
Latency
Version
Unit
Note
-8
-H
-L
-0
Operating current
(One bank active)
I
CC1
Burst length = 1
t
RC
≥
t
RC
(min)
I
OL
= 0 mA
2,360
2,180
2,180
2,090
mA
1
Precharge standby current in
power-down mode
I
CC2
P
CKE
≤
V
IL
(max), t
CC
= 15ns
38
mA
3
I
CC2
PS CKE & CLK
≤
V
IL
(max), t
CC
=
∞
38
Precharge standby current in
non power-down mode
I
CC2
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 15ns
Input signals are changed one time during 30ns
540
mA
3
I
CC2
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
270
Active standby current in
power-down mode
I
CC3
P
CKE
≤
V
IL
(max), t
CC
= 15ns
74
mA
3
I
CC3
PS CKE & CLK
≤
V
IL
(max), t
CC
=
∞
74
Active standby current in
non power-down mode
I
CC3
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 15ns
Input signals are changed one time during 30ns
720
mA
3
I
CC3
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
450
mA
3
Operating current
(Burst mode)
I
CC4
I
OL
= 0mA
Page burst
2Banks activated
t
CCD
=2CLK
3
2,540
2,180
2,180
2,180
mA
1
2
2,000
2,180
2,000
2,000
Refresh current
I
CC5
t
RC
≥
t
RC
(min)
3,060
2,700
mA
2
Self refresh current
I
CC6
CKE
≤
0.2V
38
mA
3
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Measured with 1 PLL & 3 Drive ICs.
Notes :
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