參數(shù)資料
型號： KMM374S403CTL
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 4Mx72 SDRAM DIMM(4Mx72 動態(tài) RAM模塊)
中文描述： 4Mx72 SDRAM的內(nèi)存（4Mx72動態(tài)內(nèi)存模塊）
文件頁數(shù)： 5/13頁
文件大?。?/td> 141K
代理商： KMM374S403CTL
KMM374S403CTL
REV. 3 Mar. '98
PC66 SDRAM MODULE
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
V
IN
, V
OUT
-1.0 ~ 4.6
V
Voltage on V
DD
supply relative to Vss
V
DD
, V
DDQ
-1.0 ~ 4.6
V
Storage temperature
T
STG
-55 ~ +150
°
C
Power dissipation
P
D
18
W
Short circuit current
I
OS
50
mA
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Note :
DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= 0 to 70
°
C)
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply voltage
V
DD
3.0
3.3
3.6
V
Input high voltage
V
IH
2.0
3.0
V
DDQ
+0.3
V
1
Input low voltage
V
IL
-0.3
0
0.8
V
2
Output high voltage
V
OH
2.4
-
-
V
I
OH
= -2mA
Output low voltage
V
OL
-
-
0.4
V
I
OL
= 2mA
Input leakage current (Inputs)
I
IL
-18
-
18
uA
3
Input leakage current (I/O pins)
I
IL
-3
-
3
uA
3,4
CAPACITANCE
(V
DD
= 3.3V, T
A
= 23
°
C, f = 1MHz, V
REF
=1.4V
±
200
mV)
Parameter
Symbol
Min
Max
Unit
Input capacitance (A0 ~ A10/AP, BA0)
Input capacitance (RAS, CAS, WE)
Input capacitance (CKE0 ~ CKE1)
Input capacitance (CLK0 ~ CLK3)
Input capacitance (CS0 ~ CS3)
Input capacitance (DQM0 ~ DQM7)
Data input/output capacitance (DQ0 ~ DQ63)
Data input/output capacitance (CB0 ~CB7)
C
IN1
C
IN2
C
IN3
C
IN4
C
IN5
C
IN6
C
OUT1
C
OUT2
65
65
40
30
30
15
10
10
95
95
60
40
40
25
20
20
pF
pF
pF
pF
pF
pF
pF
pF
MAXIMUM TRACE LENGTHS
Signal
Max lengths
Unit
Signal
Max lengths
Unit
A0 ~ A10/AP
BA0
RAS
CAS
WE
9.0
9.0
9.0
9.0
9.0
Inches
Inches
Inches
Inches
Inches
CKE0 ~ CKE1
CS0 ~ CS3
DQM0 ~ DQM7
DQ0 ~ DQ63
CB0 ~ CB7
6.0
4.0
3.0
2.0
2.0
Inches
Inches
Inches
Inches
Inches
1. V
IH
(max) = 5.6V AC. The overshoot voltage duration is
≤
3ns.
2. V
IL
(min) = -2.0V AC. The undershoot voltage duration is
≤
3ns.
3. Any input 0V
≤
V
IN
≤
V
DDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
4. Dout is disabled, 0V
≤
V
OUT
≤
V
DDQ.
Notes :
相關(guān)PDF資料
PDF描述
KMM374S403CT 4Mx72 SDRAM DIMM(4Mx72 動態(tài) RAM模塊)
KMM374S803BTL 8Mx72 SDRAM DIMM(8Mx72 動態(tài) RAM模塊)
KMM374S823BTL 8Mx72 SDRAM DIMM(8Mx72 動態(tài) RAM模塊)
KMM374S823BT 8Mx72 SDRAM DIMM(8Mx72 動態(tài) RAM模塊)
KMM375S1723T 16Mx72 SDRAM DIMM(16M x 72 動態(tài) RAM模塊)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KMM38 制造商:TYSEMI 制造商全稱:TY Semiconductor Co., Ltd 功能描述:SILICON PLANAR ZENER DIODES
KMM39 制造商:TYSEMI 制造商全稱:TY Semiconductor Co., Ltd 功能描述:SILICON PLANAR ZENER DIODES
KMM391M400MCND 制造商:United Chemi-Con 功能描述:SN400X139 UCC S6L9A
KMM4 制造商:TYSEMI 制造商全稱:TY Semiconductor Co., Ltd 功能描述:SILICON PLANAR ZENER DIODES
KMM40 制造商:TYSEMI 制造商全稱:TY Semiconductor Co., Ltd 功能描述:SILICON PLANAR ZENER DIODES
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*