參數(shù)資料
型號: KMM374F404BS
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 4M x 72 DRAM DIMM(4Mx72 動態(tài) RAM模塊)
中文描述: 4米× 72的DRAM內(nèi)存(4Mx72動態(tài)內(nèi)存模塊)
文件頁數(shù): 4/20頁
文件大?。?/td> 417K
代理商: KMM374F404BS
DRAM MODULE
KMM374F404BS
CAPACITANCE
(T
A
= 25
°
C, V
CC
=3.3V, f = 1MHz)
Item
Symbol
C
IN1
C
IN2
C
IN3
C
IN4
CDQ
Min
Max
40
31
31
24
17
Unit
pF
pF
pF
pF
pF
Input capacitance[A0-A11]
Input capacitance[W0, W2, OE0, OE2]
Input capacitance[RAS0, RAS2]
Input capacitance[CAS0 - CAS7]
Input/Output capacitance[DQ0-DQ63, CB0-CB7]
-
-
-
-
-
Test condition : V
ih
/V
il
=2.2/0.7V, V
oh
/V
ol
=2.0/0.8V, output loading CL=100pF
Parameter
Symbol
-5
-6
Unit
Note
Min
84
128
Max
Min
104
153
Max
Random read or write cycle time
Read-modify-write cycle time
Access time from RAS
Access time from CAS
Access time from column address
CAS to output in Low-Z
OE to output in Low-Z
Output buffer turn-off delay from CAS
Transition time(rise and fall)
RAS precharge time
RAS pulse width
RAS hold time
CAS hold time
CAS pulse width
RAS to CAS delay time
RAS to column address delay time
CAS to RAS precharge time
Row address set-up time
Row address hold time
Column address set-up time
Column address hold time
Column address to RAS lead time
Read command set-up time
Read command hold referenced to CAS
Read command hold referenced to RAS
Write command set-up time
Write command hold time
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
Data set-up time
Data hold time
Refresh period
CAS to W dealy time
RAS to W dealy time
t
RC
t
RWC
t
RAC
t
CAC
t
AA
t
CLZ
OLZ
t
CEZ
t
T
t
RP
t
RAS
t
RSH
t
CSH
t
CAS
t
RCD
t
RAD
t
CRP
t
ASR
t
RAH
t
ASC
t
CAH
t
RAL
t
RCS
t
RCH
t
RRH
t
WCS
t
WCH
t
WP
t
RWL
t
CWL
t
DS
t
DH
t
REF
t
CWD
t
RWD
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
ns
50
13
25
60
15
30
3,4,10
3,4,5,13
3,10,13
3,13
3,13
6,11,13
2
3
3
3
1
3
3
3
1
40
60
10
40
10
20
15
5
0
10
0
10
30
0
0
0
0
10
10
10
10
0
10
13
50
13
50
30
50
8
38
8
17
12
5
0
7
0
7
25
0
0
0
0
7
7
8
7
0
7
10K
10K
13
13
10K
37
25
10K
45
30
4,13
10,13
13
13
13
14
14
13
8
8,13
7
13
17
9,13
9,13
64
64
33
70
38
84
7,16
7,13
AC CHARACTERISTICS
(0
°
C
T
A
70
°
C, V
CC
=3.3V
±
0.3V. See notes 1,2.)
相關(guān)PDF資料
PDF描述
KMM374F410CK1 4M x 72 DRAM DIMM(4Mx72 動態(tài) RAM模塊)
KMM374F400CK1 4M x 72 DRAM DIMM(4Mx72 動態(tài) RAM模塊)
KMM374F804BS 8M x 72 DRAM DIMM(8Mx72 動態(tài) RAM模塊)
KMM374F810CK 8M x 72 DRAM DIMM(8Mx72 動態(tài) RAM模塊)
KMM374F800CK 8M x 72 DRAM DIMM(8Mx72 動態(tài) RAM模塊)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KMM374S403CT 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:PC100 SDRAM MODULE
KMM38 制造商:TYSEMI 制造商全稱:TY Semiconductor Co., Ltd 功能描述:SILICON PLANAR ZENER DIODES
KMM39 制造商:TYSEMI 制造商全稱:TY Semiconductor Co., Ltd 功能描述:SILICON PLANAR ZENER DIODES
KMM391M400MCND 制造商:United Chemi-Con 功能描述:SN400X139 UCC S6L9A
KMM4 制造商:TYSEMI 制造商全稱:TY Semiconductor Co., Ltd 功能描述:SILICON PLANAR ZENER DIODES