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參數資料
| 型號： | KMM372C1600BS |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K 8K Refresh 5V |
| 中文描述： | 1,600 × 72的DRAM內存的ECC的使用16Mx4，4K的8K的刷新5V的 |
| 文件頁數： | 4/19頁 |
| 文件大?。?/td> | 430K |
| 代理商： | KMM372C1600BS |
DRAM MODULE
KMM372C213CK/CS
CAPACITANCE
(T
A
= 25
°
C, Vcc=5V, f = 1MHz)
Item
Symbol
C
IN1
C
IN2
C
IN3
C
IN4
C
DQ1
Min
Max
15
17
38
17
17
Unit
pF
pF
pF
pF
pF
Input capacitance[A0-A10, B0]
Input capacitance[W0, W2, OE0, OE2]
Input capacitance[RAS0 , RAS2]
Input capacitance[CAS0 , CAS4]
Input/Output capacitance[DQ0 - 71 ]
-
-
-
-
-
AC CHARACTERISTICS
(0
°
C
≤
T
A
≤
70
°
C, V
CC
=5.0V
±
10%. See notes 1,2.)
Test condition : V
ih
/V
il
=2.4/0.8V, V
oh
/V
ol
=2.4/0.4V, Output loading CL=100pF
Parameter
Symbol
-5
-6
Unit
Note
Min
90
133
Max
Min
110
155
Max
Random read or write cycle time
Read-modify-write cycle time
Access time from RAS
Access time from CAS
Access time from column address
CAS to output in Low-Z
Output buffer turn-off delay
Transition time(rise and fall)
RAS precharge time
RAS pulse width
RAS hold time
CAS hold time
CAS pulse width
RAS to CAS delay time
RAS to column address delay time
CAS to RAS precharge time
Row address set-up time
Row address hold time
Column address set-up time
Column address hold time
Column address to RAS lead time
Read command set-up time
Read command hold referenced to CAS
Read command hold referenced to RAS
Write command hold time
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
Data set-up time
Data hold time
Refresh period (2K refresh)
Write command set-up time
CAS to W delay time
Column address to W delay time
CAS precharge to W delay time
t
RC
t
RWC
t
RAC
t
CAC
t
AA
t
CLZ
t
OFF
t
T
t
RP
t
RAS
t
RSH
t
CSH
t
CAS
t
RCD
t
RAD
t
CRP
t
ASR
t
RAH
t
ASC
t
CAH
t
RAL
t
RCS
t
RCH
t
RRH
t
WCH
t
WP
t
RWL
t
CWL
t
DS
t
DH
t
REF
t
WCS
t
CWD
t
AWD
t
CPWD
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
ns
ns
ns
50
18
30
60
20
35
3,4
3,4,5,11
3,10,11
3,11
6,11
2
5
5
2
30
50
18
48
13
18
13
10
5
8
0
10
30
0
0
-2
10
10
18
13
-2
15
5
5
2
18
50
20
50
40
60
20
58
15
18
13
10
5
8
0
10
35
0
0
-2
10
10
20
15
-2
20
10K
10K
11
11
10K
32
20
10K
40
25
4,11
10,11
11
11
11
11
8
8,11
11
9,11
9,11
32
32
0
36
48
53
0
7
7
7
7
40
55
60
相關PDF資料 |
PDF描述 |
|---|---|
| KMM372C1680BK | 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K 8K Refresh 5V |
| KMM372C1680BS | 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K 8K Refresh 5V |
| KMM372C213CS | 2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 5V |
| KMM372C400CK | 4M x 72 DRAM DIMM(4M x 72 動態(tài) RAM模塊) |
| KMM372C400CS | 4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 5V |
相關代理商/技術參數 |
參數描述 |
|---|---|
| KMM372C1680BK | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K 8K Refresh 5V |
| KMM372C1680BS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K 8K Refresh 5V |
| KMM372C213CK | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 5V |
| KMM372C213CS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 5V |
| KMM372C400CK | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 5V |
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