參數(shù)資料
型號: KMM366S1623BT
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 16Mx64 SDRAM DIMM(16Mx64 動態(tài) RAM模塊)
中文描述: 16Mx64 SDRAM的內存(16Mx64動態(tài)內存模塊)
文件頁數(shù): 8/13頁
文件大?。?/td> 158K
代理商: KMM366S1623BT
PC100 SDRAM MODULE
KMM366S1623BT
REV. 3 July 1998
REFER TO THE INDIVIDUAL COMPONENET, NOT THE WHOLE MODULE.
Parameter
Symbol
-8
-H
-L
Unit
Note
Min
Max
Min
Max
Min
Max
CLK cycle time
CAS latency=3
t
CC
8
1000
10
1000
10
1000
ns
1
CAS latency=2
12
10
12
CLK to valid
output delay
CAS latency=3
t
SAC
6
6
6
ns
1,2
CAS latency=2
6
6
7
Output data
hold time
CAS latency=3
t
OH
3
3
3
ns
2
CAS latency=2
3
3
3
CLK high pulse width
t
CH
3
3
3
ns
3
CLK low pulse width
t
CL
3
3
3
ns
3
Input setup time
t
SS
2
2
2
ns
3
Input hold time
t
SH
1
1
1
ns
3
CLK to output in Low-Z
t
SLZ
1
1
1
ns
2
CLK to output
in Hi-Z
CAS latency=3
t
SHZ
6
6
6
ns
CAS latency=2
6
6
7
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Notes :
AC CHARACTERISTICS
(AC operating conditions unless otherwise noted)
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