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參數資料
| 型號： | KM736V689A |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 64Kx36-Bit Synchronous Pipelined Burst SRAM(64Kx36位同步流水線脈沖 靜態(tài) RAM) |
| 中文描述： | 64Kx36位同步流水線突發(fā)靜態(tài)存儲器（64Kx36位同步流水線脈沖靜態(tài)內存） |
| 文件頁數： | 7/15頁 |
| 文件大小： | 332K |
| 代理商： | KM736V689A |
PRELIMINARY
PRELIMINARY
KM736V689A
64Kx36 Synchronous SRAM
- 7 -
Rev 0.2
Aug. 1998
TEST CONDITIONS
(T
A
=0 to 70
°
C, V
DD
=3.3V+0.3V/-0.165V, unless otherwise specified)
Parameter
Value
Input Pulse Level
0 to 3V
Input Rise and Fall Time(Measured at 0.3V and 2.7V)
2ns
Input and Output Timing Reference Levels
1.5V
Output Load
See Fig. 1
DC ELECTRICAL CHARACTERISTICS
(T
A
=0 to 70
°
C, V
DD
=3.3V
+
0.3V
/0.165
V)
* V
IL
(Min)=-2.0(Pulse Width
≤
t
CYC
/
2)
** V
IH
(Max)=4.6(Pulse Width
≤
t
CYC
/
2)
** In Case of I/O Pins, the Max. V
IH
=V
DDQ
+0.5V
Parameter
Symbol
Test Conditions
Min
Max
Unit
Input Leakage Current(except ZZ)
I
IL
V
DD
=Max ; V
IN
=V
SS
to V
DD
-2
+2
μ
A
μ
A
Output Leakage Current
I
OL
Output Disabled, V
OUT
=V
SS
to V
DDQ
-2
+2
Operating Current
I
CC
Device Selected, I
OUT
=0mA,
ZZ
≤
V
IL
, All Inputs=V
IL
or V
IH
Cycle Time
≥
t
CYC
min
-44
-
440
mA
-50
-
400
-55
-
380
-60
-
360
-67
-
320
-72
-
280
Standby Current
I
SB
Device deselected, I
OUT
= 0mA,
ZZ
≤
V
IL
, f = Max,
All Inputs
≤
0.2V or
≥
V
DD
-0.2V
-44
-
110
mA
-50
-
100
-55
-
100
-60
-
90
-67
-
80
-72
-
70
I
SB1
Device deselected, I
OUT
= 0mA,
ZZ
≤
0.2V,
f=0,
All Inputs=fixed (V
DD
-0.2V or 0.2V)
-
20
mA
I
SB2
Device deselected, I
OUT
=0mA, ZZ
≥
V
DD
-
0.2V, f = Max, All Inputs
≤
V
IL
or
≥
V
IH
-
20
mA
Output Low Voltage
V
OL
I
OL
= 8.0mA
-
0.4
V
Output High Voltage
V
OH
I
OH
= -4.0mA
2.4
-
V
Input Low Voltage
V
IL
-0.5*
0.8
V
Input High Voltage
V
IH
2.0
V
DD
+0.5**
V
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相關代理商/技術參數 |
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