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| 型號(hào)： | KM736V687A |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 64Kx36-Bit Synchronous Burst SRAM(64Kx36位同步脈沖 靜態(tài) RAM) |
| 中文描述： | 64Kx36位同步突發(fā)靜態(tài)存儲(chǔ)器（64Kx36位同步脈沖靜態(tài)內(nèi)存） |
| 文件頁(yè)數(shù)： | 5/15頁(yè) |
| 文件大小： | 343K |
| 代理商： | KM736V687A |
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PRELIMINARY
KM736V687
64Kx36 Synchronous SRAM
- 5 -
Rev 1.0
May 1997
SYNCHRONOUS TRUTH TABLE
NOTE : 1. X means "Don
′
t Care".
2. The rising edge of clock is symbolized by
↑
.
3. WRITE = L means Write operation in WRITE TRUTH TABLE.
WRITE = H means Read operation in WRITE TRUTH TABLE.
4. Operation finally depends on status of asynchronous input pins(ZZ and OE).
CS
1
H
L
L
L
L
L
L
L
X
H
X
H
X
H
X
H
CS
2
X
L
X
L
X
H
H
H
X
X
X
X
X
X
X
X
CS
2
X
X
H
X
H
L
L
L
X
X
X
X
X
X
X
X
ADSP
X
L
L
X
X
L
H
H
H
X
H
X
H
X
H
X
ADSC
L
X
X
L
L
X
L
L
H
H
H
H
H
H
H
H
ADV
X
X
X
X
X
X
X
X
L
L
L
L
H
H
H
H
WRITE
X
X
X
X
X
X
L
H
H
H
L
L
H
H
L
L
CLK
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
Address Accessed
N/A
N/A
N/A
N/A
N/A
External Address
External Address
External Address
Next Address
Next Address
Next Address
Next Address
Current Address
Current Address
Current Address
Current Address
Operation
Not Selected
Not Selected
Not Selected
Not Selected
Not Selected
Begin Burst Read Cycle
Begin Burst Write Cycle
Begin Burst Read Cycle
Continue Burst Read Cycle
Continue Burst Read Cycle
Continue Burst Write Cycle
Continue Burst Write Cycle
Suspend Burst Read Cycle
Suspend Burst Read Cycle
Suspend Burst Write Cycle
Suspend Burst Write Cycle
ABSOLUTE MAXIMUM RATINGS*
*NOTE : Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is
not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on V
DD
Supply Relative to V
SS
V
DD
-0.3 to 4.6
V
Voltage on V
DDQ
Supply Relative to V
SS
V
DDQ
V
DD
V
Voltage on Input Pin Relative to V
SS
V
IN
-0.3 to 6.0
V
Voltage on I/O Pin Relative to V
SS
V
IO
-0.3 to V
DDQ
+0.5
V
Power Dissipation
P
D
1.2
W
Storage Temperature
T
STG
-65 to 150
°
C
Operating Temperature
T
OPR
0 to 70
°
C
°
C
Storage Temperature Range Under Bias
T
BIAS
-10 to 85
WRITE TRUTH TABLE
NOTE : 1. X means "Don
′
t Care".
2. All inputs in this table must meet setup and hold time around the rising edge of CLK(
↑
).
GW
BW
WEa
WEb
WEc
WEd
Operation
H
H
X
X
X
X
READ
H
L
H
H
H
H
READ
H
L
L
H
H
H
WRITE BYTE a
H
L
H
L
H
H
WRITE BYTE b
H
L
H
H
L
L
WRITE BYTE c and d
H
L
L
L
L
L
WRITE ALL BYTEs
L
X
X
X
X
X
WRITE ALL BYTEs
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| KM736V689 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx36 Synchronous SRAM |
| KM736V689A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx36 Synchronous SRAM |
| KM736V689L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx36 Synchronous SRAM |
| KM736V887 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx36 & 512Kx18 Synchronous SRAM |
| KM736V989 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36 & 1Mx18 Synchronous SRAM |
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