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參數(shù)資料
| 型號(hào)： | KM718V787 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128Kx18 Synchronous SRAM(128Kx18位同步靜態(tài) RAM) |
| 中文描述： | 128Kx18同步SRAM（128Kx18位同步靜態(tài)內(nèi)存） |
| 文件頁(yè)數(shù)： | 14/15頁(yè) |
| 文件大?。?/td> | 343K |
| 代理商： | KM718V787 |
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PRELIMINARY
KM718V787
128Kx18 Synchronous SRAM
- 14 -
Rev 1.0
May 1997
APPLICATION INFORMATION
DEPTH EXPANSION
The Samsung 128Kx18 Synchronous Burst SRAM has two additional chip selects for simple depth expansion.
This permits easy secondary cache upgrades from 128K depth to 256K depth without extra logic.
Data
Address
CLK
ADS
Microprocesso
r
CS
2
CS
2
CLK
ADSC
WEx
OE
CS
1
Address
Data
ADV
ADSP
128Kx18
SB
SRAM
(Bank 0)
CS
2
CS
2
CLK
ADSC
WEx
OE
CS
1
Address
Data
ADV
ADSP
128Kx18
SB
SRAM
(Bank 1)
CLK
Address
Cache
Controller
A
[0:17]
A
[17]
A
[0:16]
A
[17]
A
[0:16]
I/O
[0:71]
* Please refer to attached timing diagram 1
CLOCK
ADSP
ADDRESS
[0:n]
Data Out
(Bank 0)
INTERLEAVE READ TIMING
(Refer to non-interleave write timing for interleave write timing)
Bank 0 is selected by CS
2
, and Bank 1 deselected by CS
2
Q1-1
Q1-2
Q1-4
Q1-3
OE
Data Out
(Bank 1)
t
SS
t
SH
A1
A2
WRITE
CS
1
A
n+1
ADV
Q2-1
Q2-2
Q2-4
Q2-3
t
AS
t
AH
t
CSS
t
CSH
t
WS
t
WH
t
ADVS
t
ADVH
t
OE
t
LZOE
t
HZC
Bank 0 is deselected by CS
2
, and Bank 1 selected by CS
2
Don
′
t Care
Undefined
t
CD
t
LZC
*NOTES n = 14 32K depth, 15 64K depth, 16 128K depth, 17 256K depth
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