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參數(shù)資料
| 型號(hào)： | KM718B90 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 64Kx18-Bit Synchronous SRAM(64Kx18位同步靜態(tài) RAM) |
| 中文描述： | 64Kx18位同步SRAM（64Kx18位同步靜態(tài)內(nèi)存） |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 264K |
| 代理商： | KM718B90 |
PRELIMINARY
KM718B90
64Kx18 Synchronous SRAM
- 4 -
Rev 1.1
April 1997
SYNCHRONOUS TRUTH TABLE
(See Notes 1 and 2)
NOTE1 : X means "Don
′
t Care".
NOTE2 : The rising edge of clock is symbolized by
↑
.
CS
H
H
L
L
X
X
L
X
X
ADSP
L
X
L
H
H
H
H
H
H
ADSC
X
L
X
L
H
H
L
H
H
ADV
X
X
X
X
L
H
X
L
H
LW/UW
X
X
X
H
H
H
H
L
L
K
↑
↑
↑
↑
↑
↑
↑
↑
↑
Address Accessed
N/A
N/A
External Address
External Address
Next Address
Current Address
External Address
Next Address
Current Address
Operation
Not Selected
Not Selected
Begin Burst Read Cycle
Begin Burst Read Cycle
Continue Burst Read Cycle
Suspend Burst Read Cycle
Begin Burst Write Cycle
Continue Burst Write Cycle
Suspend Burst Write Cycle
ABSOLUTE MAXIMUM RATING*
*NOTE : Stresses greater than those listed under "Absolute Maximum Rating" may cause permanent damage to the device. This is a s tress rating only
and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on V
CC
Supply Relative to V
SS
V
CC
-0.5 to 7.0
V
Voltage on Any Other Pin Relative to V
SS
V
IN
-0.5 to 7.0
V
Power Dissipation
P
D
1.2
W
Storage Temperature
T
STG
-65 to 150
°
C
Operating Temperature
T
OPR
0 to 70
°
C
Storage Temperature Range Under Bias
T
BIAS
-10 to 85
°
C
ASYNCHRONOUS TRUTH TABLE
(See Notes 1 and 2)
NOTE1 : X means "Don
′
t Care".
NOTE2 : For write cycles that follow read cycles, the output buffers must be disabled with OE, otherwise data bus contention w ill occur.
OE
Operation
L
Read I/O0~I/O17
H
Output High-Z
X
Not Selected, Outputs High-Z
TRUTH TABLES
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