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參數(shù)資料
| 型號(hào)： | KM68V1002AJ-1200 |
| 元件分類(lèi)： | SRAM |
| 英文描述： | 128K X 8 STANDARD SRAM, 12 ns, PDSO32 |
| 封裝： | 0.400 INCH, PLASTIC, SOJ-32 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 164K |
| 代理商： | KM68V1002AJ-1200 |
KM68V1002A, KM68V1002AI
CMOS SRAM
PRELIMINARY
Rev 5.0
- 1 -
February 1998
Document Title
128Kx8 High Speed Static RAM(3.3V Operating), Revolutionary Pin out.
Operated at Commercial and Industrial Temperature Range.
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this
device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Rev. No.
Rev. 0.0
Rev. 1.0
Rev. 2.0
Rev. 3.0
Rev. 4.0
Rev. 5.0
Remark
Design Target
Preliminary
Final
History
Initial release with Design Target.
Release to Preliminary Data Sheet.
1.1. Replace Design Target to Preliminary
Release to final Data Sheet.
2.1. Delete Preliminary
Add Low Power Product and update D.C parameters.
3.1. Add Low Power Products with Isb1=0.5mA and Data Retention
Mode(L-ver. only)
3.2. Update D.C parameters.
Add Industrial Temperature Range parts and 300mil 32-SOJ PKG
4.1. Add 32-Pin 300mil-SOJ Package.
4.2. Add Industrial Temperature Range parts with the same parame-
ters as Commercial Temperature Range parts.
4.2.1. Add KM68V1002AI/ALI parts for Industrial Temperature
Range.
4.2.2. Add ordering information.
4.2.3. Add the condition for operating at Industrial Temp. Range.
4.3. Add timing diagram to define tWP as
″(Timing Wave Form of
Write Cycle(CS=Controlled)
″
5.1. Delete L-version.
5.2. Delete Data Retention Characteristics and Wavetorm.
5.3. Delete 17ns Part
5.4. Add Capacitive load of the test environment in A.C test load
Items
Previous spec.
(12/15/17/20ns part)
Updated spec.
(12/15/17/20ns part)
Icc
170/165/160/155mA
140/135/135/130mA
Isb
30mA
20mA
Isb1
10mA
5mA
Draft Data
Jan. 18th, 1995
Apr. 22th, 1995
Feb. 29th, 1996
Jul. 16th, 1996
Jun. 2nd, 1997
Feb. 25th, 1998
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